相关论文: Unified Semi-Classical Description of Intrinsic Sp…

The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic…

The spin Hall effect (SHE) is one of the promising phenomena to utilize a spin current as spintronics devices, and the theoretical understanding of its microscopic mechanism is essential to know how to control its response. Although the SHE…

Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density…

The Spin Hall Effect (SHE) is a promising way for transforming charge currents into spin currents in spintronic devices. Large values of the Spin Hall Angle, the characteristic parameter of the yield of this transformation, have been…

The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…

Spin Hall effect (SHE) is the generation of spin current due to an electric field, and has been observed in a variety of materials. The analogous spin Hall current can be induced by chemical potential and temperature gradient, both of which…

Motivated by a recent experiment (Sanchez-Yamagishi et.al, arXiv:1602.06815) reporting evidence of helical spin-polarized edge states in layer-biased twisted bilayer graphene under a magnetic flux, we study the possibility of stabilising a…

A promising approach to attain long-distance coherent spin propagation is accessing topological spin-polarized edge states in graphene. Achieving this without external magnetic fields necessitates engineering graphene band structure,…

We present an approach to the fractional quantum Hall effect observed in grapheme (GFQHE), basing us on the model developed previously for the fractional quantum Hall effect in a two-dimensional electron system embedded in a quantum well…

In graphene, we report the first theoretical demonstration of how the intrinsic spin orbit interaction can be deduced from the theory and how it can be controlled by tuning a uniform magnetic field, and/or by changing the strength of a long…

We study spin-Hall effects in time-reversal symmetry (TRS) broken systems such as triplet chiral superconductors and TRS preserved ones such as graphene. For chiral triplet superconductors, we show that the edge states carry a quantized…

Physical properties such as the conductivity are usually classified according to the symmetry of the underlying system using Neumann's principle, which gives an upper bound for the number of independent components of the corresponding…

The orbital-Hall effect (OHE), similarly to the spin-Hall effect (SHE), refers to the creation of a transverse flow of orbital angular momentum that is induced by a longitudinally applied electric field. For systems in which the spin-orbit…

Since spin currents can be generated, detected, and manipulated via the spin Hall effect (SHE), the design of strong SHE materials has become a focus in the field of spintronics. Because of the recent experimental progress also the spin…

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts…

We propose fractional spin hall effect (FSHE) by coupling pseudospin states of cold bosonic atoms to optical fields. The present scheme is an extension to interacting bosonic system of the recent work \cite{liu,zhu} on optically induced…

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…

We develop a microscopic theory of the spin Seebeck effect (SSE) at the interface of a bilayer system of a ferromagnetic insulator and graphene. We compare the tunneling spin current at the interface because of the SSE and the spin pumping…

The optical spin Hall effect (OSHE) is a transport phenomenon of exciton polaritons in semiconductor microcavities, caused by the polaritonic spin-orbit interaction, that leads to the formation of spin textures. In the semiconductor cavity,…

The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…