相关论文: Negative nonlocal resistance in mesoscopic gold Ha…

We probe the relationship between magnetism and "non-metallic" transport in the magnetically frustrated metal FeCrAs using the low-field Hall effect. We find that the low-field Hall coefficient is dependent on crystal orientation, and…

We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the…

We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall…

We consider spin and charge flow in normal metals. We employ the Keldysh formalism to find transport equations in the presence of spin-orbit interaction, interaction with magnetic impurities, and non-magnetic impurity scattering. Using the…

We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex (side-jump mechanism). We show that in contrast to the ordinary Hall effect, there…

Recently a positive spin Hall angle (SHA) of 0.021, was observed experimentally in nonmagnetic CuIr alloys [Niimi et al., Phys. Rev. Lett. 106, 126601 (2011)] and attributed predominantly to an extrinsic skew scattering mechanism, while a…

Spin gapless semiconductors exhibit a finite band gap for one spin channel and closed gap for other spin channel, emerged as a new state of magnetic materials with a great potential for spintronic applications. The first experimental…

We study theoretically the manifestation of the spin-Hall effect in a two-dimensional electronic system with Rashba spin-orbit coupling via dc-transport measurements in realistic mesoscopic H-shape structures. The Landauer-Buttiker…

We have recently identified a protected topological semimetal in graphene which presents a zero-energy edge mode robust to disorder and interactions. Here, we address the characteristics of this semimetal and show that the $\mathbb{Z}$…

Magnetic domain walls function as a wave guide for low energy magnons. In this paper we develop the theory for the non-local transport of these bound magnons through a ferromagnetic insulator that are injected and detected electrically in…

Non-local currents and voltages are better able at withstanding the deleterious effects of dephasing than local currents and voltages in nanoscale systems. This hypothesis is known to be true in quantum Hall set-ups. We test this hypothesis…

One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either…

We study magnetotransport in conical helimagnet crystals. Spin dependent magnetoresistance exhibits dramatic properties for high and low electron concentrations at different temperatures. For spin up electrons we find negative…

Itinerant ferromagnets constitute an important class of materials wherein spin-polarization can affect the electric transport properties in nontrivial ways. One such phenomenon is anomalous Hall effect which depends on the details of the…

We predict robust Ising ferromagnetism driven by Coulomb interaction in the metallic phase of twisted transition metal dichalcogenides homobilayers for a range of small twist angles. Due to the presence of spin-valley locking and Chern…

Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of…

We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…

In ferromagnetic metals, the interconversion of spin and charge currents via the spin Hall effect and its inverse can depend on the angle between the ferromagnets magnetization and the spin current polarization direction. Here, such a…

We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…

Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous…