相关论文: Paraelectric in a Strong High-Frequency Field
We examine the low-energy excitations in the vicinity of the quantum critical point in LiHoF$_4$, a physical realization of the Transverse Field Ising Model, focusing on the long-range fluctuations which soften to zero energy at the…
The suppression of ferroelectricity in ultrathin films of improper ferroelectric hexagonal ferrites or manganites has been attributed to the effect of interfacial clamping, however, the quantitative understanding and related…
The magnitude of the relative permittivity of the ferroelectric nematic phase (NF) is under a lively scientific discussion since the phase was recently discovered. Dielectric spectroscopy measurements (DSM) give a huge value of relative…
Nanoparticles of the ferrimagnetic epsilon-Fe2O3 oxide have been synthesized by sol-gel method. Here, we report on the measurements of the dielectric permittivity as a function of temperature, frequency and magnetic field. It is found that,…
The normal ferroelectric to paraelectric phase transition in model ferroelectric materials such as BaTiO3 is typically characterized by a sharp, well-defined dielectric constant peak at a specific transition temperature. However, under…
A transition in a spheroidal particle from the paraelectric to the ferroelectric phase as well as dynamic susceptibility are studied without approximation in the paraphase. It is assumed that the surface charge is compensated and the…
Ferroelectric films in the paraelectric phase exhibit two undesirable properties: hysteresis in the voltage-capacitance characteristics and a significant relaxation time of the capacitance. Our experiments show that suppression of both of…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
We study the impact of background electric fields on a hot plasma of charged particles -- a setting relevant for the early stages of heavy-ion collisions as well as laser pulse experiments. Historically, the electric susceptibility --…
Room-temperature ferromagnetism is observed in (110) oriented ZnO films containing 5 at % of Sc, Ti, V, Fe, Co or Ni, but not Cr, Mn or Cu ions. There are large moments, 1.9 and 0.5 muB/atom for Co- and Ti-substituted oxides, respectively.…
The collective amplitude mode of the order parameter in displacive ferroelectrics, termed the ferron, represents the amplitude fluctuations of long-range ordered polarization. At temperatures well below phase transition temperature $T_c$,…
The ferromagnetic resonance frequencies are obtained for a thin ferromagnetic film with surface anisotropy for the cases when the external magnetic field is applied perpendicularly or parallel to the film surface, and for various…
We describe the use of a near-field scanning microwave microscope to image the permittivity and tunability of bulk and thin film dielectric samples on a length scale of about 1 micron. The microscope is sensitive to the linear permittivity,…
Non-linear magnetization dynamics is essential for the operation of many spintronics devices. For microwave assisted switching of magnetic elements the low field regime is of particular interest. In addition a large number of experiments…
Frequency upconversion of an electromagnetic wave can occur in ionized plasma with decreasing electric permittivity and in split-ring resonator-structure metamaterials with decreasing magnetic permeability. We develop a general theory to…
The dielectric constant of the incipient ferroelectric EuTiO$_3$ exhibits a sharp decrease at about 5.5K, at which temperature antiferromagnetic ordering of the Eu spins simultaneously appears, indicating coupling between the magnetism and…
We demonstrate how the quantum paraelectric ground state of SrTiO$_3$ can be accessed via a microscopic $ab~initio$ approach based on density functional theory. At low temperature the quantum fluctuations are strong enough to stabilize the…
The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances…
We calculate the pyrocoefficient, static dielectric susceptibility profiles and its thickness dependence of ferroelectric thin films. Also, the temperature dependences of above quantities have been calculated. For the calculations we use…
Near-field radiative heat transfer (NFRHT) between rough surfaces, due to its widespread presence in engineering practice of near-field energy utilization, requires indepth studies, especially from the perspective of physical mechanism. In…