相关论文: Impact ionization in InSb probed by THz-pump THz-p…
The superconducting transition temperature (Tc) of a single layer graphene coupled to an Indium oxide (InO) film, a low carrier-density superconductor, is found to increase with decreasing carrier density and is largest close to the average…
Enhancement of minor ions such as $^3$He and heavy ions in flare-associated solar energetic particle (SEP) events remains one of the major puzzles in heliophysics. In this work, we use 3D hybrid simulations (kinetic protons and fluid…
This work theoretically and analytically demonstrates the magnetic field-induced spectral radiative properties of photonic metamaterials incorporating both Indium Antimonide (InSb) and Tungsten (W) in the terahertz (THz) frequency regime.…
We experimentally investigated the optical responses of a superconducting niobium resonator. It was found that, with increasing radiation power, the resonance frequency increases monotonically below around 500 mK, decreases monotonically…
In this work we report on Hall effect, resistivity and thermopower measurements in n-type indium selenide at room temperature under either hydrostatic and quasi-hydrostatic pressure. Up to 40 kbar (= 4 GPa), the decrease of carrier…
In an ultrafast optical-pump terahertz-probe measurement, the photoinduced material response can be modulated on a timescale shorter than the extent of the THz pulse. In this situation, the measured time-frequency response deviates from a…
Recently, the discovery of room-temperature superconductivity (SC) was experimentally realized in the fcc phase of LaH$_{10}$ under megabar pressure. Specifically, the isotope effect of $T_{\rm c}$ was measured by the replacement of…
Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of…
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive…
We perform the first measurement of the thermal and ionization state of the intergalactic medium (IGM) across 0.9 < z < 1.5 using 301 \lya absorption lines fitted from 12 HST STIS quasar spectra, with a total pathlength of \Delta z=2.1. We…
The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by…
Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with increasing QW depth (x). Time-resolved differential…
We use three-dimensional numerical hydrodynamic simulations of the turbulent, multiphase atomic interstellar medium (ISM) to construct and analyze synthetic HI 21 cm emission and absorption lines. Our analysis provides detailed tests of 21…
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…
We introduce a contactless technique for probing superconductivity, metal-insulator transitions, and magnetic ordering in micron-sized samples under extreme pressure. Utilizing a multistage Lenz lens system, directly sputtered onto diamond…
Charge dynamics of (Ti1-xVx)2O3 with x=0-0.06 has been investigated by measurements of charge transport and optical conductivity spectra in a wide temperature range of 2-600K with the focus on the thermally and doping induced…
Based on the full band electronic structure calculations, first we consider the effect of n-type doping on the optical absorption and the refractive index in wurtzite InN and GaN. We identify quite different dielectric response in either…
We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the…
A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…
The reversible heat in lithium-ion batteries (LIBs) due to entropy change is fundamentally important for understanding the chemical reactions in LIBs and developing proper thermal management strategies. However, the direct measurements of…