相关论文: Transverse field-induced effects in carbon nanotub…

Angular perturbations modify the band structure of armchair (and other metallic) carbon nanotubes by breaking the tube symmetry and may induce a metal-semiconductor transition when certain selection rules are satisfied. The symmetry…

Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting…

Using the Landauer-Buttiker formalism, we calculate the effect of structural twist on electron transport in conducting carbon nanotubes. We demonstrate that even a localized region of twist scatters the propagating pi electrons and induces…

Magnetotransport measurements in large diameter multiwall carbon nanotubes (20-40 nm) demonstrate the competition of a magnetic-field dependent bandstructure and Altshuler-Aronov-Spivak oscillations. By means of an efficient capacitive…

A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the…

Disorder effects on the density of states and electronic conduction in metallic carbon nanotubes are analyzed by a tight binding model with Gaussian bond disorder. Metallic armchair and zigzag nanotubes are considered. We obtain a…

The electronic spectra of long carbon nanotubes (CNTs) can, to a very good approximation, be obtained using the dispersion relation of graphene with both angular and axial periodic boundary conditions. In short CNTs one must account for the…

We report here on electrical measurements on individual multi-walled carbon nanotubes (MWNTs) that show that the presence or movement of impurities or defects in the carbon nanotube can radically change its low temperature transport…

We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the…

We present a systematic study of the electronic and magnetic properties of transition-metal (TM) atomic chains adsorbed on the zigzag single-wall carbon nanotubes (SWNTs). We considered the adsorption on the external and internal wall of…

The electronic spin-orbit coupling in carbon nanotubes is strongly enhanced by the curvature of the tube surface and has important effects on the single-particle spectrum. Here, we include the full spin-orbit interaction in the formulation…

The electronic and structural properties of zigzag and armchair single-wall carbon nanotubes (SWCNT) with a single vacancy or two vacancies located at various distances have been obtained within the frame of the Density Function Theory…

We performed studies of coherent electronic transport through a single walled carbon nanotube. In the calculations multiple scattering on the contacts and interference processes were taken into account. Conductance is a composition of…

In this letter, we demonstrate a strong dependence of the electrostatic deformation of doubly-clamped single-walled carbon nanotubes on both the field strength and the tube length, using molecular simulations. Metallic nanotubes are found…

A single-walled carbon nanotube presents a seamless cylindrical graphene surface and is thus an ideal adsorption substrate for investigating the physics of atoms and molecules in two dimensions and approaching the one-dimensional limit.…

We propose a method to modulate the bandgaps in quasi-metallic carbon nanotubes using a transverse electric field. Unlike previous investigations, we include curvature effects of the nanotubes by incorporating both $\pi$- and…

We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is…

Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron…

In carbon nanotubes, the most abundant defects, caused for example by irradiation or chemisorption treatments, are small perturbing clusters, i.e. bi-site defects, extending over both A and B sites. The relative positions of these…

We consider theoretically an armchair Carbon nanotube (CNT) in the presence of an electric field and in contact with an s-wave superconductor. We show that the proximity effect opens up superconducting gaps in the CNT of different strengths…