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相关论文: Spectral properties of orbital polarons in Mott in…

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Critical properties in photoemission spectra for the one-dimensional Mott insulator with orbital degeneracy are studied by exploiting the integrable {\it t-J} model, which is a supersymmetric generalization of the SU($n$) degenerate spin…

凝聚态物理 · 物理学 2009-10-31 T. Fujii , Y. Tsukamoto , N. Kawakami

We study the spectral function of two-leg Hubbard ladders with the time-dependent density matrix renormalization group method (tDMRG). The high-resolution spectrum displays features of spin-charge separation and a scattering continuum of…

强关联电子 · 物理学 2019-06-19 Chun Yang , Adrian E. Feiguin

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

We study the electronic spectral properties in two examples of strongly interacting systems: a Mott-Hubbard insulator with additional electron-boson interactions, and a polaronic semiconductor. An approximate unified framework is developed…

强关联电子 · 物理学 2009-11-11 S. Fratini , S. Ciuchi

We study the motion of a hole with internal degrees of freedom, introduced to the zigzag magnetic ground state of Na$_2$IrO$_3$, by using the self-consistent Born approximation. We find that the low, intermediate, and high-energy spectra…

强关联电子 · 物理学 2023-07-28 Wei Wang , Zhao-Yang Dong , Shun-Li Yu , Jian-Xin Li

We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…

强关联电子 · 物理学 2009-01-08 J. Sirker , J. Damerau , A. Klümper

In this short review, which is based on the works published between 2011 and 2016, we discuss the problem of the propagation of a collective orbital excitation (orbiton) created in the Mott insulating and antiferromagnetic ground state. On…

强关联电子 · 物理学 2019-12-25 Krzysztof Wohlfeld

Understanding pairing in the strong-coupling regime of doped Mott insulators remains an open problem in the context of cuprate superconductors. We perform ultra-high resolution numerical simulations of spectral functions in the highly…

强关联电子 · 物理学 2026-03-16 Pit Bermes , Sebastian Paeckel , Annabelle Bohrdt , Lukas Homeier , Fabian Grusdt

We study the spectral function of a single hole doped into the (a,b) plane of the Mott insulator LaVO$_3$, with antiferromagnetic (AF) spin order of S=1 spins accompanied by alternating orbital (AO) order of active $\{d_{yz},d_{zx}\}$…

强关联电子 · 物理学 2010-03-02 Krzysztof Wohlfeld , Andrzej M. Oles , Peter Horsch

Transition metal oxides are a rich group of materials with very interesting physical properties that arise from the interplay of the charge, spin, orbital, and lattice degrees of freedom. One interesting consequence of this, encountered in…

强关联电子 · 物理学 2019-09-11 Krzysztof Bieniasz , Mona Berciu , Andrzej M. Oleś

The density response of a doped Mott-Hubbard insulator is discussed starting from the t-J model in a slave boson 1/N representation. In leading order O(1) the density fluctuation spectra $N({\bf q},\omega)$ are determined by an undamped…

强关联电子 · 物理学 2009-11-10 P. Horsch , G. Khaliullin

The spectral function of one hole in different magnetic states of the one-dimensional t-J model including three-site term and frustration $J^{\prime}$ is studied. In the strong coupling limit $J \to 0$ (corresponding to $U \to \infty$ of…

强关联电子 · 物理学 2009-10-31 R. Hayn , R. O. Kuzian

The two-orbital degenerate Hubbard model with distinct hopping integrals is studied by combining dynamical mean-field theory with quantum Monte Carlo simulations. The role of orbital fluctuations for the nature of the Mott transition is…

强关联电子 · 物理学 2009-11-11 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

Using the self-consistent Born approximation we calculate Reiter's wavefunction for a single hole introduced into the undoped and orbitally ordered ground state of the t-J model with $t_{2g}$ orbital degrees of freedom. While the number of…

强关联电子 · 物理学 2009-02-25 Krzysztof Wohlfeld , Andrzej M. Oles , Maria Daghofer , Peter Horsch

We show how the general and basic asymmetry between two fundamental degrees of freedom present in strongly correlated oxides, spin and orbital, has very profound repercussions on the elementary spin and orbital excitations. Whereas the…

The quantum physics of ions and electrons behind low-energy spectra of strongly correlated {\it molecular} conductors, superconductors and Mott insulators is poorly known, yet fascinating especially in orbitally degenerate cases. The…

超导电性 · 物理学 2016-09-29 S. Shahab Naghavi , Michele Fabrizio , Tao Qin , Erio Tosatti

We investigate the spectral properties of a hole moving in a two-dimensional Hubbard model for strongly correlated t_2g electrons. Although superexchange interactions are Ising-like, a quasi-one-dimensional coherent hole motion arises due…

强关联电子 · 物理学 2008-02-15 M. Daghofer , K. Wohlfeld , A. M. Oles , E. Arrigoni , P. Horsch

Motivated by recent Raman and resonant inelastic X-ray scattering experiments performed for Mott insulators, which suggest formation of excitons in these systems, we present a theory of exciton formation in the upper Hubbard band. The…

强关联电子 · 物理学 2009-11-07 P. Wrobel , R. Eder

The physics of strongly correlated fermions described by Hubbard or $t$-$J$ models in the underdoped regime -- relevant for high-temperature superconductivity in cuprate compounds -- remains a subject of ongoing debate. In particular, the…

强关联电子 · 物理学 2025-04-11 Toni Guthardt , Markus Scheb , Jan von Delft , Annabelle Bohrdt , Fabian Grusdt

The internal structure of doped holes in the Mott insulator may provide important insight into the physics of doped cuprates. Its observability via a single-particle probe by scanning tunneling spectroscopy (STS) and angle-resolved…

强关联电子 · 物理学 2024-08-27 Jing-Yu Zhao , Zheng-Yu Weng
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