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Thermal transport in the Si/SiO$_2$ multishell nanotubes is investigated theoretically. The phonon energy spectra are obtained using the atomistic Lattice Dynamics approach. Thermal conductivity is calculated using the Boltzmann transport…

材料科学 · 物理学 2021-04-30 C. Isacova , A. Cocemasov , D. L. Nika , V. M. Fomin

The thermal conductivity, k(T), of bulk single-wall carbon nanotubes (SWNT's) displays a linear temperature dependence at low T that has been attributed to 1D quantization of phonons. To explore this issue further, we have measured the k(T)…

材料科学 · 物理学 2016-08-31 M. C. Llaguno , J. Hone , A. T. Johnson , J. E. Fischer

The electronic properties of multi-wall carbon nanotubes (MWNTs) have attracted much attention because they could lead to nano-sized electronic devices. Using chemical vapor deposition (CVD), MWNTs are produced in large quantities at a low…

材料科学 · 物理学 2007-05-23 Hisashi Kajiura , Anil Nandyala , Alexey Bezryadin

Suspended single-walled carbon nanotube devices comprised of high quality electrical contacts and two electrostatic gates per device are obtained. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis…

介观与纳米尺度物理 · 物理学 2007-05-23 Jien Cao , Qian Wang , Dunwei Wang , Hongjie Dai

Boundary scattering in hierarchically disordered nanomaterials is an effective way to reduce the thermal conductivity of thermoelectric materials and increase their performance. In this work we investigate thermal transport in silicon based…

材料科学 · 物理学 2019-02-27 Dhritiman Chakraborty , Laura de Sousa Oliveira , Neophytos Neophytou

The bulk tin selenide (SnSe) is the best thermoelectric material currently with the highest figure-of-merit due to the strong phonon-phonon interactions. We investigate the effect of electron-phonon coupling (EPC) on the transport…

介观与纳米尺度物理 · 物理学 2018-02-14 Kaike Yang , Ji-Chang Ren , Hongfei Qiu , Jian-Sheng Wang

At micro- to nano-scales, classical size effects in heat conduction play an important role in suppressing the thermal transport process. Such effects occur when the characteristic lengths become commensurate to the mean free paths (MFPs) of…

应用物理 · 物理学 2019-05-08 Qing Hao , Yue Xiao , Qiyu Chen

For similar disorder, the backscattering contribution to the conductivity, irrelevant for metallic single-walled carbon nanotubes, is proved to become more significant for doped semiconducting systems, as found in experiments. In the case…

无序系统与神经网络 · 物理学 2009-11-07 Stephan Roche , Francois Triozon , Angel Rubio

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…

介观与纳米尺度物理 · 物理学 2014-03-25 Nan Ma , Debdeep Jena

We report a novel phenomenon in carbon nanotube (CNT) based devices, the transphonon effects, which resemble the transonic effects in aerodynamics. It is caused by dissipative resonance of nanotube phonons similar to the radial breathing…

材料科学 · 物理学 2009-03-12 Zhiping Xu , Quanshui Zheng , Qing Jiang , Chi-Chiu Ma , Yang Zhao , Guanhua Chen , Huajian Gao , Gexue Ren

We computationally study the electrostatic potential profile and current carrying capacity of carbon nanotubes as a function of length and diameter. Our study is based on solving the non equilibrium Green's function and Poisson equations…

介观与纳米尺度物理 · 物理学 2009-11-11 A. Svizhenko , M. P. Anantram

A continuous model of double-walled carbon nanotube (DWCNT) low-frequency dynamics was constructed. In the frame of the approach proposed formation of a DWCNT low-frequency phonon spectrum from the ones of corresponding single-walled carbon…

介观与纳米尺度物理 · 物理学 2016-06-22 M. V. Avramenko , S. B. Rochal

Individual metallic single-wall carbon nanotubes show unsual non-Ohmic transport behaviors at high bias fields. For low resistance contact samples, the differential conductance dI/dV increases with increasing bias, reaching a maximum at…

介观与纳米尺度物理 · 物理学 2015-06-04 S. Fujita , H. C. Ho

We theoretically study the magnetoresistance of single wall carbon nanotubes (SWCNTs) in the ballistic transport regime, using a standard tight-binding approach. The main attention is directed to spin-polarized electrical transport in the…

介观与纳米尺度物理 · 物理学 2015-06-25 S. Krompiewski , Gianaurelio Cuniberti

Wave effects of phonons can give rise to controllability of heat conduction beyond that by particle scattering at surfaces and interfaces. In this work, we propose a new class of 3D nanostructure: a silicon-nanowire-cage (SiNWC) structure…

介观与纳米尺度物理 · 物理学 2016-11-02 Dengke Ma , Hongru Ding , Han Meng , Lei Feng , Yue Wu , Junichiro Shiomi , Nuo Yang

The electrical conductivity of a macroscopic assembly of nanomaterials is determined through a complex interplay of electronic transport within and between constituent nano-objects. Phonons play dual roles in this situation: their increased…

介观与纳米尺度物理 · 物理学 2023-05-10 Davoud Adinehloo , Weilu Gao , Ali Mojibpour , Junichiro Kono , Vasili Perebeinos

Prior experimental studies showed that nanowires are promising structures for improving the thermoelectric performance of practical thermoelectric materials due to the strongly induced phonon-boundary scattering. However, few studies…

介观与纳米尺度物理 · 物理学 2017-09-13 Lei Ma , Riguo Mei , Mengmeng Liu , Xuxin Zhao , Qixing Wu , Hongyuan Sun

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that…

材料科学 · 物理学 2008-04-14 J. H. Chen , C. Jang , S. Xiao , M. Ishigami , M. S. Fuhrer

Electrical transport through single-walled carbon nanotubes (SWNTs) is investigated by using the nearest-neighbor tight-binding model coupled with two electron reservoirs. When the SWNT-electrode coupling is not axially symmetric,…

介观与纳米尺度物理 · 物理学 2007-05-23 Junko Takahashi , Shuichi Tasaki

Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…

介观与纳米尺度物理 · 物理学 2009-11-13 Neophytos Neophytou , Abhijeet Paul , Gerhard Klimeck