相关论文: Electron spin blockade and singlet-triplet transit…

Spintronics devices rely on spin-dependent transport behavior evoked by the presence of spin-polarized electrons. Transport through nanostructures, on the other hand, is dominated by strong Coulomb interaction. We study a model system in…

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…

The role of spin is investigated in the transport through a quantum dot with two overlapping resonances (one having a width larger than the level separation and the other very narrow, cf. Silvestrov and Imry, Phys. Rev. Lett. {\bf 85}, 2565…

Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…

We study a double quantum dot system with two interacting electrons in the presence of a time-dependent periodic (AC) electric field and spin-orbit interaction. We focus on the phenomenon of Coherent Destruction of Tunneling (CDT) for an…

Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…

From our theoretical studies of resonant Raman transitions in two-electron quantum dots (artificial helium atoms) we show that in this system, the singlet-triplet Raman transitions are allowed (in polarized configuration) only in the…

We study the Coulomb blockade of tunneling through a double quantum dot. The temperature dependence of the linear conductance is strongly affected by the inter-dot tunneling. As the tunneling grows, a crossover from temperature-independent…

We perform time-dependent simulations of spin exchange for an electron pair in laterally coupled quantum dots. The calculation is based on configuration interaction scheme accounting for spin-orbit (SO) coupling and electron-electron…

The study of charge and spin transport through semiconductor quantum dots is experiencing a renaissance due to recent advances in nano-fabrication and the realization of quantum dots as candidates for quantum computing. In this work, we…

In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of…

We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime, and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport…

We predict that a single-level quantum dot without discernible splitting of its spin states develops a spin-precession resonance in charge transport when embedded into a spin valve. The resonance occurs in the generic situation of Coulomb…

The spin dynamics in two electron double quantum dots embedded in two dimensional electron gas at the interface between SrTiO$_3$ and LaAlO$_3$ is studied by an exact numerical solution of the time-dependent Schr\"odinger equation, in the…

The spin-polarized transport through two-level quantum dots weakly coupled to ferromagnetic leads is considered theoretically in the Coulomb blockade regime. It is assumed that the dot is doubly occupied, so that the current flows due to…

In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is…

Charge fluctuations of a large quantum dot coupled to a two-dimensional lead via a single-mode good Quantum Point Contact (QPC) and capacitively coupled to a back-gate, are investigated in the presence of a parallel magnetic field. The…

We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional (2D) lattice,…

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the…

Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…