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相关论文: A benzene interference single-electron transistor

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Recent observations of destructive quantum interference in single-molecule junctions confirm the role played by quantum effects in the electronic conductance properties of molecular systems. We show here that the destructive interference…

介观与纳米尺度物理 · 物理学 2017-09-25 Riccardo Frisenda , Vera Jansen , Ferdinand C. Grozema , Herre S. J. van der Zant , Nicolas Renaud

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual…

We present a general analytical formula and an ab initio study of quantum interference in multi-branch molecules. Ab initio calculations are used to investigate quantum interference in a benzene-1,2-dithiolate (BDT) molecule sandwiched…

介观与纳米尺度物理 · 物理学 2016-08-14 R. E. Sparks , V. M. García-Suárez , D. Zs. Manrique , C. J. Lambert

The conductance of {\em cis/trans} isomers of stilbene molecules connected to armchair single wall carbon nanotubes is studied in the Landauer formalism combined with a density-functional based approach. For a given arrangement of the…

介观与纳米尺度物理 · 物理学 2007-05-23 R. Gutierrez , F. Grossmann , R. Schmidt

We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed…

介观与纳米尺度物理 · 物理学 2015-06-25 Karsten Flensberg , Arkadi A. Odintsov , Feike Liefrink , Paul Teunissen

We study the transport properties of an Anderson-Holstein model with orbital degeneracies and a tunneling phase that allows for the formation of dark states. The resulting destructive interference yields a characteristic pattern of positive…

介观与纳米尺度物理 · 物理学 2020-09-21 Andrea Donarini , Michael Niklas , Milena Grifoni

The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…

介观与纳米尺度物理 · 物理学 2009-10-31 Xiaohui Wang

The quest for molecular structures exhibiting strong quantum interference effects in the transport setting has long been on the forefront of chemical research. Here, we establish theoretically that the unusual geometry of spiro-conjugated…

介观与纳米尺度物理 · 物理学 2018-04-03 Jakub K. Sowa , Jan A. Mol , G. Andrew D. Briggs , Erik M. Gauger

We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case…

介观与纳米尺度物理 · 物理学 2012-09-26 Stefan Ballmann , Rainer Härtle , Pedro B. Coto , Marcel Mayor , Mark Elbing , Martin R. Bryce , Michael Thoss , Heiko B. Weber

We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…

介观与纳米尺度物理 · 物理学 2015-05-13 Binhui Hu , C. H. Yang

The effect of dephasing on electron transport through a benzene molecule is carefully examined using a phenomenological model introduced by B\"{u}ttiker. Within a tight-binding framework all the calculations are performed based on the…

介观与纳米尺度物理 · 物理学 2011-04-14 Moumita Dey , Santanu K. Maiti , S. N. karmakar

We propose a new type of molecular transistor, the Quantum Interference Effect Transistor (QuIET), based on tunable current suppression due to quantum interference. We show that any aromatic hydrocarbon ring has two-lead configurations for…

介观与纳米尺度物理 · 物理学 2007-05-23 D. M. Cardamone , C. A. Stafford , S. Mazumdar

We consider a model of a quantum-mechanical resonator capacitively coupled to a single electron transistor (SET). The tunnel current in the SET is modulated by the vibrations of the resonator, and thus the system operates as a displacement…

介观与纳米尺度物理 · 物理学 2009-11-10 D. Mozyrsky , I. Martin , M. B. Hastings

The effect on molecular transport due to chemical modification of the metal-molecule interface is investigated, using as an example the prototypical molecular device formed by attaching a p-disubstituted benzene molecule onto two gold…

介观与纳米尺度物理 · 物理学 2009-11-10 Yongqiang Xue , Mark A. Ratner

The question of how localized electrons interact with delocalized electrons is central to many problems at the forefront of solid state physics. The simplest example is the Kondo phenomenon, which occurs when an impurity atom with an…

强关联电子 · 物理学 2009-10-30 D. Goldhaber-Gordon , Hadas Shtrikman , D. Mahalu , David Abusch-Magder , U. Meirav , M. A. Kastner

We give a detailed discussion of the Quantum Interference Effect Transistor (QuIET), a proposed device which exploits interference between electron paths through aromatic molecules to modulate current flow. In the off state, perfect…

介观与纳米尺度物理 · 物理学 2007-05-23 Charles A. Stafford , David M. Cardamone , Sumit Mazumdar

We explore the effect of molecular size on injected carrier transport. We have fabricated and characterized field effect transistors (FETs) on optically transparent single crystals of tetracene, the molecule of which is comprised of four…

凝聚态物理 · 物理学 2007-05-23 V. Y. Butko , X. Chi , A. P. Ramirez

We measure the low bias conductance of a series of substituted benzene diamine molecules while breaking a gold point contact in a solution of the molecules. Transport through these substituted benzenes is by means of nonresonant tunneling…

Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…

强关联电子 · 物理学 2015-10-28 S. A. Fedorov , N. M. Chtchelkatchev , O. G. Udalov , I. S. Beloborodov

We consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island vibrations may strongly influence…

介观与纳米尺度物理 · 物理学 2009-11-10 N. M. Chtchelkatchev , W. Belzig , C. Bruder