相关论文: Auto-oscillation threshold, narrow spectral lines,…
The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the…
Coherent spin oscillations were non-thermally induced by circularly polarized pulses in fully compensated antiferromagnetic NiO. This effect is attributed to an entirely new mechanism of the action, on the spins, of the effective magnetic…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
The self-synchronization of spin torque oscillators is investigated experimentally by re-injecting its radiofrequency (rf) current after a certain delay time. We demonstrate that the emission power and the spectral linewidth are improved…
Spin torque nano-oscillators (STNOs) hold encouraging promise for nanoscale microwave generators, modulators, and new types of intelligent computing. The nonlinearity, describing the current-induced tunability of oscillating frequency, is a…
We present tight-binding calculations of the spin torque in non-collinear magnetic tunnel junctions based on the non-equilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach…
We observe both dc voltage rectification and frequency conversion that occur when a reference microwave current is injected to a MgO based magnetic tunnel junction (MTJ). The rectification that is spin-transfer torque dependent is observed…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
We study the conductance oscillation of an antiferromagnetic layer tunnel junction composed of antiferromagnetic topological insulators (MTIs) such as MnBi$_{2}$Te$_{4}$. In presence of an in-plane magnetic field, we find that the two…
Strength of the the symmetry spin filtering effect (as defined by the asymptotic behavior of the tunneling magnetoresistance (TMR) at large barrier thicknesses induced by this effect) is studied for the Fe/MgO/Fe magnetic tunnel junctions…
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…
A possibility to excite a stable self-oscillation in a perpendicularly magnetized ferromagnet by the spin Hall effect is investigated theoretically. It had been shown that such self-oscillation cannot be stabilized solely by the direct spin…
Spin torque oscillators placed onto a nonmagnetic heavy metal show synchronized auto-oscillations due to the coupling originating from spin Hall magnetoresistance effect. Here, we study a system having two spin torque oscillators under the…
Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called "spin-diode" in a magnetic tunnel junction to wirelessly detect the microwave…
We consider two intrinsic sources of noise in ultra-sensitive magnetic field sensors based on MgO magnetic tunnel junctions, coming both from $^{25}$Mg nuclear spins ($I=5/2$, 10% natural abundance), and S=1 Mg-vacancies. While nuclear…
Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane…
The dynamics of the magnetization of the free layer in a spin-torque nano oscillator (STNO) influenced by a noncollinear alignment between the magnetizations of the free and pinned layers due to an interlayer exchange coupling has been…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…
A free electron description of spin-dependent tranport in magnetic tunnel junctions with non collinear magnetizations is presented. We investigate the origin of transverse spin density in tunnelling transport and the quantum interferences…
We discuss the current induced magnetization dynamics of spin valves F0|N|SyF where the free layer is a synthetic ferrimagnet SyF made of two ferromagnetic layers F1 and F2 coupled by RKKY exchange coupling. In the interesting situation…