相关论文: Low-field quantum Hall transport in an electron Fa…
$\mathrm{\beta}$-Gallium oxide ($\mathrm{\beta\mbox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron…
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…
We examine the relation between different electronic transport phenomena in a Fabry-Perot interferometer in the fractional quantum Hall regime. In particular, we study the way these phenomena reflect the statistics of quantum Hall…
We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $\nu=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs…
We report on ac transport through carbon nanotube Fabry-Perot devices. We show that tuning the intensity of the ac gating induces an alternation of suppression and partial revival of the conductance interference pattern. For frequencies…
Since the experimental realisation of the integer quantised Hall effect in a two dimensional electron system subject to strong perpendicular magnetic fields in 1980, a central question has been the interrelation between the conductance…
We report complex magnetotransport patterns of the $\nu=1$ integer quantum Hall state in a GaAs/AlGaAs sample from the newest generation with a record high electron mobility. The reentrant integer quantum Hall effect in the flanks of the…
Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents…
We present magneto transport experiments of quasi 3D PbTe wide quantum wells. A plateau-like structure in the Hall resistance is observed, which corresponds to the Shubnikov de Haas oscillations in the same manner as known from the quantum…
Motivated by recent quantum oscillation observations in the underdoped high-temperature superconductors, the effect of the short-range antiferromagnetic correlations on the electronic properties of the short-ranged d-density wave state is…
We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias…
A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding…
We report simultaneous quasi-dc magnetotransport and high frequency surface acoustic wave measurements on bilayer two-dimensional electron systems in GaAs. Near strong integer quantized Hall states a strong magnetic field sweep hysteresis…
A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling barrier exhibits a complex Landau level dispersion. Magnetotunneling spectroscopy is employed to investigate the small energy gaps which…
The 2D system of electron confined to the lowest Landau level is described using a representation of the density matrix depending both on electron and hole coordinates. Condensation of the electron system into a fractional quantum Hall…
Electroluminescence spectra of a silicon nanostructure with edge channels covered by chains of dipole centers with negative correlation energy are demonstrated. The presence of such chains provides conditions for nondissipative transport of…
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems.…
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers…
We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong…
In the strong magnetic field fractional quantum Hall regime, electrons in a two-dimensional electron system are confined to their lowest Landau level. Because of the macroscopic Landau level degeneracy nearly all physical properties at low…