相关论文: High-output CPP-GMR sensor with synthetic-ferrimag…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Non-contact current monitoring has emerged as a prominent research focus owing to its non-intrusive characteristics and low maintenance requirements. However, while they offer high sensitivity, contactless sensors necessitate sophisticated…
We describe a new approach to understanding and calculating magnetization switching rates and noise in the recently observed phenomenon of "spin-torque switching". In this phenomenon, which has possible applications to information storage,…
The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin currents absorbed in the FM. We exploit the large spin absorption at the Ru interface to…
We demonstrate that the addition of Dy capping layers in current perpendicular to the plane giant magneto-resistive spin-valves can increase the critical current density beyond which spin-torque induced instabilities are observed by about a…
Spin-torque driven ferromagnetic resonance (ST-FMR) is used to study magnetic excitations in Co/Ni synthetic layers confined in nanojunctions. Field swept ST-FMR measurements were conducted with a magnetic field applied perpendicular to the…
Spintronics is showing promising results in the search for new materials and effects to reduce energy consumption in information technology. Among these materials, ferrimagnets are of special interest, since they can produce large spin…
Measurements of ferromagnetic resonance (FMR) are pivotal to modern magnetism and spintronics. Recently, we reported on the Ferris FMR technique, which relies on large-amplitude modulation of the externally applied magnetic field. It was…
It is shown that the current-induced torques between a ferromagnetic layer and an antiferromagnetic layer with a compensated interface vanish when the ferromagnet is aligned with an axis of spin-rotation symmetry of the antiferromagnet. For…
One essential feature in MRAM cells is the spin torque efficiency, which describes the ratio of the critical switching current to the energy barrier. Within this paper it is reported that the spin torque efficiency can be improved by a…
The difference in the density of states for up- and down-spin electrons in a ferromagnet (F) results in spin-dependent scattering of electrons at a ferromagnet / nonmagnetic (F/N) interface. In a F/N/F spin-valve, this causes a…
Conventional spin Hall nano-oscillators (SHNOs) face fundamental power limitations due to the low anisotropic magnetoresistance (AMR < 0.3%) of ferromagnetic layers. To address this, we developed a synthetic antiferromagnetic spin-valve…
Flexibility for interface engineering, and access to all-optical switching of the magnetization, make synthetic ferrimagnets an interesting candidate for advanced opto-spintronic devices. Moreover, due to their layered structure and…
We study a nonlinear spin dynamics of a ferromagnetic ring in a vortex state induced by the spin-polarized current. We also suggest to use the ferromagnetic ring as a free layer of a coreless vortex spin-transfer nano-oscillator. The…
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…
A new current induced spin-torque transfer effect has been observed in a single ferromagnetic layer without resorting to multilayers. At a specific current density of one polarity injected from a point contact, abrupt resistance changes due…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to…
Free-standing ferromagnetic nano-membranes with thicknesses below 10 nm could effectively be used for spin selective filtering of electrons. Such membranes can work both as spin detectors in electron-spectroscopy, -microscopy and…
Spin-transfer-torque, a transfer of angular momentum between the electron spin and the local magnetic moments, is a promising and key mechanism to control ferromagnetic materials in modern spintronic devices . However, much less attention…