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相关论文: Influence of Disorder on Electron-Hole Pair Conden…

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Because graphene is an atomically two-dimensional gapless semiconductor with nearly identical conduction and valence bands, graphene-based bilayers are attractive candidates for high-temperature electron-hole pair condensation. We present…

介观与纳米尺度物理 · 物理学 2008-09-04 Hongki Min , Rafi Bistritzer , Jung-Jung Su , A. H. MacDonald

The state with a spontaneous interlayer phase coherence in a graphene based bilayer quantum Hall system is studied. This state can be considered as a gas of superfluid electron-hole pairs with the components of the pair belonging to…

超导电性 · 物理学 2009-12-23 D. V. Fil , L. Yu. Kravchenko

Inversion asymmetry in bilayer graphene can be tuned by the displacement field. As a result, the band dispersion in biased bilayer graphene acquires flat band regions near the Dirac points along with a non-trivial band geometry. We analyze…

介观与纳米尺度物理 · 物理学 2025-09-01 Xiang Hu , Enrico Rossi , Yafis Barlas

Correlated insulators are frequently observed in magic angle twisted bilayer graphene at even fillings of electrons or holes per moir\'e unit-cell. Whereas theory predicts these insulators to be intervalley coherent excitonic phases, the…

介观与纳米尺度物理 · 物理学 2023-02-15 Gal Shavit , Kryštof Kolář , Christophe Mora , Felix von Oppen , Yuval Oreg

Exciton bound states in solids between electrons and holes are predicted to form a superfluid at high temperatures. We show that by employing atomically thin crystals such as a pair of adjacent bilayer graphene sheets, equilibrium…

超导电性 · 物理学 2013-05-09 Andrea Perali , David Neilson , Alex R. Hamilton

In ordinary semiconductor bilayers, exciton condensates appear at total Landau level filling factor $\nu_{T}=1$. We predict that similar states will occur in Bernal stacked graphene bilayers at many non-zero integer filling factors. For…

介观与纳米尺度物理 · 物理学 2010-03-04 Yafis Barlas , Rene Côté , J. Lambert , A. H. MacDonald

We consider suspened bilayer graphene under applied perpendicular electric bias field that is known to generate a single particle gap $2\Delta$ and a related electric polarization ${\cal P}$. We argue that the bias also drives a quantum…

介观与纳米尺度物理 · 物理学 2023-01-20 Harley D. Scammell , Oleg P. Sushkov

In bilayer systems electron-hole (e-h) pairs with spatially separated components (i.e., with electrons in one layer and holes in the other) can be condensed to a superfluid state when the temperature is lowered. This article deals with the…

介观与纳米尺度物理 · 物理学 2015-05-28 A. I. Bezuglyj , S. I. Shevchenko

We present a theory of spatially indirect exciton condensate states in systems composed of a pair of electrically isolated Bernal graphene bilayers. The ground state phase diagram in a two-dimensional displacement-field/inter-bilayer-bias…

材料科学 · 物理学 2017-01-25 Jung-Jung Su , Allan H. MacDonald

We theoretically demonstrate the formation of a new type of unconventional superconductivity in graphene materials, which exhibits gapless property. The studied superconductivity is based on an interlayer pairing of chiral electrons in…

介观与纳米尺度物理 · 物理学 2015-06-04 Mir Vahid Hosseini , Malek Zareyan

We investigate the superfluid properties of disordered double layer graphene systems using the non-equilibrium Green's function (NEGF) formalism. The complexity of such a structure makes it imperative to study the effects of lattice…

介观与纳米尺度物理 · 物理学 2011-08-17 Brian Dellabetta , Matthew J. Gilbert

Using the self-consistent Hartree-Fock approximation, we study the compressibility instability of the interacting electrons in bilayer graphene. The chemical potential and the compressibility of the electrons can be significantly altered by…

强关联电子 · 物理学 2011-01-11 Xin-Zhong Yan , C. S. Ting

Spatially indirect excitons can be created when an electron and a hole, confined to separate layers of a double quantum well system, bind to form a composite Boson. Because there is no recombination pathway such excitons are long lived…

介观与纳米尺度物理 · 物理学 2017-06-07 J. I. A. Li , T. Taniguchi , K. Watanabe , J. Hone , C. R. Dean

We consider the pairing of electrons and holes due to their Coulomb attraction in two parallel, independently gated graphene layers, separated by a barrier. At weak coupling, there exist the BCS-like pair-condensed state. Despite the fact…

强关联电子 · 物理学 2009-11-13 Yu. E. Lozovik , A. A. Sokolik

We consider ground state of electron-hole graphene bilayer composed of two independently doped graphene layers when a condensate of spatially separated electron-hole pairs is formed. In the weak coupling regime the pairing affects only…

介观与纳米尺度物理 · 物理学 2011-07-26 Yu. E. Lozovik , A. A. Sokolik

We develop a theory for interlayer pairing of chiral electrons in graphene materials which results in an unconventional superconducting (S) state with s-wave spin-triplet order parameter. In a pure bilayer graphene, this superconductivity…

介观与纳米尺度物理 · 物理学 2012-12-10 Mir Vahid Hosseini , Malek Zareyan

Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when…

Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…

介观与纳米尺度物理 · 物理学 2010-09-10 Benjamin E. Feldman , Jens Martin , Amir Yacoby

Superfluidity has recently been reported in double electron-hole bilayer graphene. The multiband nature of the bilayers is important because of the very small band gaps between conduction and valence bands. The long range nature of the…

超导电性 · 物理学 2019-04-24 Sara Conti , Andrea Perali , Francois M. Peeters , David Neilson

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…

介观与纳米尺度物理 · 物理学 2007-11-26 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos
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