相关论文: Pomeranchuk instability in doped graphene
We have derived algebraic, analytic expressions for the chemical potential without any restriction on temperature for all types of doped, or extrinsic, gapped Dirac cone materials including gapped graphene, silicene, germanene and…
Motivated by the recent finding of superconductivity in layered CoO_2 compounds, we investigate superconducting and magnetic instabilities of interacting electrons on the two-dimensional triangular lattice. Using a one-loop renormalization…
We obtain a novel bound state spectrum of the low energy excitations near the Fermi points of graphene in the presence of a charge impurity. The effects of possible short range interactions induced by the impurity are modelled by suitable…
We numerically study the interplay between superconductivity and disorder on the graphene honeycomb lattice with on-site Hubbard attractive interactions U using a spatially inhomogeneous self-consistent Bogoliubov-de Gennes (BdG) approach.…
We use unrestricted Hartree-Fock, density matrix renormalization group, and variational projected entangled pair state calculations to investigate the ground state phase diagram of the triangular lattice Hubbard model at "half doping"…
We consider the stability of nodal surfaces in fermionic band systems with respect to the Coulomb repulsion. It is shown that nodal surfaces at the Fermi level are gapped out at low temperatures due to emergent particle-hole orders. Energy…
We study two-stream instabilities in a non-equilibrium system in which a stream of electrons is injected into doped graphene. As with equivalent non-equilibrium parabolic band systems, we find that the graphene systems can support unstable…
Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to…
Inspired by the recent experimental discovery of superconductivity emerging from a time-reversal symmetry-breaking normal state in tetralayer rhombohedral graphene, we here investigate superconducting instabilities in this system. We…
A theoretical model is proposed to describe asymmetric gate-voltage dependence of conductance and noise in two-terminal ballistic graphene devices. The model is analyzed independently within the self-consistent Hartree and Thomas-Fermi…
We study a ferromagnetic tendency in the two-dimensional Hubbard model near van Hove filling by using a functional renormalization-group method. We compute temperature dependences of magnetic susceptibilities including incommensurate…
We present an inhomogeneous theory for the low-temperature properties of a resonantly interacting Fermi mixture in a trap that goes beyond the local-density approximation. We compare the Bogoliubov-de Gennes and a Landau-Ginzburg approach…
We compute the dynamical polarizability of graphene beyond the usual Dirac cone approximation, integrating over the full Brillouin zone. We find deviations at $\hbar\omega=2t$ ($t$ the hopping parameter) which amount to a logarithmic…
Electronic, transport, and spin properties of grain boundaries (GBs) are investigated in electrostatically doped graphene at finite electron densities within the Hartree and Hubbard approximations. We demonstrate that depending on the…
Mixtures of near-symmetric oppositely charged components with strong attractive short range interactions exhibit ordered lamellar phases at low temperatures. In the strong segregation limit the state of these systems can be described by the…
Among the different strategies used to induce the opening of a band gap in graphene, one common practice is through chemical doping. While a gap may me opened in this way, disorder-induced scattering is an unwanted side-effect that impacts…
We study Coulomb drag in double-layer graphene near the Dirac point. A particular emphasis is put on the case of clean graphene, with transport properties dominated by the electron-electron interaction. Using the quantum kinetic equation…
We investigate the electrical conductivity and thermoelectric effects in topological crystalline insulators in the presence of short- and long-range impurity interactions. We employ the generalized Boltzmann formalism for anisotropic Fermi…
Motivated by the notion that a preponderance of Coulomb interactions might lead to hydrodynamics, we carry out an ab initio calculation of the charge carrier transport properties of the electron-hole plasma of doped graphene. We include…
The emergence of the Pomeranchuk instability (PI) in a Helical Fermi liquid (HFL) residing on the surface of a three-dimensional topological insulator (3D TI) is addressed at the mean-field level. An expression for the PI condition is…