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Using long C_{N}H_{2} conjugated carbon chains with the polyynic structure as prototypical examples of one-dimensional (1D) semiconductors, we discuss self-localization of excess charge carriers into 1D large polarons in the presence of the…

材料科学 · 物理学 2009-11-13 M. L. Mayo , Yu. N. Gartstein

Charge carrier localization in extended atomic systems has been described previously as being driven by disorder, point defects or distortions of the ionic lattice. Here we show for the first time by means of first-principles computations…

介观与纳米尺度物理 · 物理学 2016-05-11 Vojtěch Vlček , Helen R. Eisenberg , Gerd Steinle-Neumann , Daniel Neuhauser , Eran Rabani , Roi Baer

We study accommodation of an excess charge carrier on long even-N polyynic oligomers C_{N}H_{2} due to displacements of the underlying carbon lattice and polarization of the surrounding solvent in the context of carrier self-localization…

化学物理 · 物理学 2016-09-28 M. L. Mayo , Yu. N. Gartstein

Due to solvation, excess charge carriers on 1d semiconductor nanostructures immersed in polar solvents undergo self-localization into polaronic states. Using a simplified theoretical model for small-diameter structures, we study…

化学物理 · 物理学 2009-11-13 Yu. N. Gartstein , G. L. Ussery

Charge carriers in organic semiconductors form polarons, which are self-localized states stabilized by interactions with their environment. Using a dielectric-stabilized tight-binding model parameterized from first-principles calculations,…

材料科学 · 物理学 2025-10-22 Vishal Jindal , Scott T. Milner

In polymeric semiconductors, charge carriers are polarons, which means that the excess charge deforms the molecular structure of the polymer chain that hosts it. This effect results in distinctive signatures in the vibrational modes of the…

When a one-dimensional (1D) semiconductor nanostructure is immersed in a sluggish polar solvent, fluctuations of the medium may result in the appearance of localized electronic levels inside the band gap. An excess charge carrier can occupy…

化学物理 · 物理学 2015-05-14 G. L. Ussery , Yu. N. Gartstein

A conduction electron (or hole) together with its self-induced polarisation in a polar semiconductor or an ionic crystal forms a quasi-particle, which is called a polaron. The polaron concept is of interest, not only because it describes…

强关联电子 · 物理学 2007-05-23 J. T. Devreese

The behavior of charge carriers in polar materials is governed by electron-phonon interactions, which affect their mobilities via phonon scattering and may localize carriers into self-induced deformation fields, forming self-trapped…

材料科学 · 物理学 2025-07-08 Vasilii Vasilchenko , Matteo Giantomassi , Samuel Poncé , Xavier Gonze

In many organic molecules the strong coupling of excess charges to vibrational modes leads to the formation of polarons, i.e., a localized state of a charge carrier and a molecular deformation. Incoherent hopping of polarons along the…

介观与纳米尺度物理 · 物理学 2015-05-13 Benjamin B. Schmidt , Matthias H. Hettler , Gerd Schön

Polarons can naturally form in materials from the interaction of extra charge carriers with the atomic lattice. Ubiquitous, they are central to various topics and phenomena such as high-T$_c$ superconductivity, electrochromism,…

材料科学 · 物理学 2024-11-05 Hamideh Hassani , Eric Bousquet , Xu He , Bart Partoens , Philippe Ghosez

A simple model for the autolocalization of a free charged particle is presented. The polarization well in the model is deep enough for only one localized level. In dielectric materials with a sufficiently large dielectric constant, two…

材料科学 · 物理学 2011-03-01 Yuri Kornyushin

Polarons are composite quasiparticles comprising electronic charge carriers taken together with the alterations they induce in surrounding condensed matter. Strong-coupling polarons form when electronic charge carriers become self-trapped:…

强关联电子 · 物理学 2022-05-09 David Emin

The concept of magnetic polaron is analysed and developed to elucidate the nature of itinerant charge carrier states in magnetic semiconductors and similar complex magnetic materials. By contrasting the scattering and bound states of…

强关联电子 · 物理学 2007-05-23 A. L. Kuzemsky

By considering a metal/polymer/metal structure within a tight-binding one-dimensional model, we have investigated the polaron formation in the presence of an electric field. When a sufficient voltage bias is applied to one of the metal…

强关联电子 · 物理学 2009-11-10 C. Q. Wu , Y. Qiu , K. Nasu

Understanding the charge carrier transport in the disordered organic molecular semiconductors is a fascinating and still unresolved problem in modern condensed-matter physics, yet has an extremely important bearing on their application in…

材料科学 · 物理学 2007-05-23 Ajit Kumar Mahapatro , Subhasis Ghosh

Polaron is a composite quasiparticle derived from an excess carrier trapped by local lattice distortion, and it has been studied extensively for decades both theoretically and experimentally. However, atomic-scale creation and manipulation…

介观与纳米尺度物理 · 物理学 2023-07-12 Huiru Liu , Aolei Wang , Ping Zhang , Chen Ma , Caiyun Chen , Zijia Liu , Yiqi Zhang , Baojie Feng , Peng Cheng , Jin Zhao , Lan Chen , Kehui Wu

We report that a dielectric polymer chain, constrained at both ends, sharply collapses when exposed to a high electric field. The chain collapse is driven by nonlocal dipolar interactions and anisotropic polarization of monomers, a…

软凝聚态物质 · 物理学 2025-09-03 Pratik Khandagale , Gal deBotton , Timothy Breitzman , Carmel Majidi , Kaushik Dayal

We study the problem of a magnetic polaron in an antiferromagnetic semiconductor (ferron). We obtain an analytical solution for the distortion produced in the magnetic structure of the d-spins due to the presence of a charge carrier bound…

强关联电子 · 物理学 2007-05-23 J. Castro , I. Gonzalez , D. Baldomir

A self-consistent model of bipolar charge-carrier injection and transport processes in a semiconductor/insulator/conductor system is developed which incorporates space-charge effects in the description of the injection process. The amount…

材料科学 · 物理学 2008-11-27 S. V. Yampolskii , Yu. A. Genenko , C. Melzer , K. Stegmaier , H. von Seggern
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