相关论文: Single Carbon Nanotube Transistor at GHz Frequency

We report on a simple method to fabricate high-frequency nanotube mechanical resonators reproducibly. We measure resonance frequencies as high as 4.2 GHz for the fundamental eigenmode and 11 GHz for higher order eigenmodes. The…

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices…

Here we investigate high frequency AC transport through narrow graphene nanoribbons with topgate potentials that form a localized quantum dot. We show that as a consequence of the finite dwell time of an electron inside the quantum dot…

Electronic transport in multiwall carbon nanotubes and semiconductor nanowires was compared. In both cases, the non ohmic behavior of the conductance, the so-called zero bias anomaly, shows a temperature dependence that scales with the…

We report fast readout of the motion of a carbon nanotube mechanical resonator. A close-proximity high electron mobility transistor amplifier is used to increase the bandwidth of the measurement of nanotube displacements from the kHz to the…

We investigate the quantum transport through a single-wall carbon nanotube connected to leads in the presence of an external radiation field. We analyze the conductance spectrum as a function of the frequency and strength of the field. We…

Suspended single-walled carbon nanotube devices comprised of high quality electrical contacts and two electrostatic gates per device are obtained. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis…

Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube…

Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a period of 100 nm, the lengths of the channel being of 1, 2, 4…

Individual metallic single-wall carbon nanotubes show unsual non-Ohmic transport behaviors at high bias fields. For low resistance contact samples, the differential conductance dI/dV increases with increasing bias, reaching a maximum at…

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field…

The charge transport properties of single superconducting tin nanowires, encapsulated by multiwalled carbon nanotubes have been investigated by multi-probe measurements. The multiwalled carbon nanotube protects the tin nanowire from…

We have measured the differential conductance dI/dV of individual multi-wall carbon nanotubes (MWNT) of different lengths. A cross-over from wire-like (long tubes) to dot-like (short tubes) behavior is observed. dI/dV is dominated by random…

Combining equilibrium and non-equilibrium molecular dynamics simulations with accurate carbon potentials, we determine the thermal conductivity $\lambda$ of carbon nanotubes and its dependence on temperature. Our results suggest an…

We use conducting-tip atomic force microscopy (AFM) to measure local electronic properties of single wall carbon nanotube (SWNT) circuits on insulating substrates. When a voltage is applied to the tip and AFM feedback is used to position…

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…

We perform a detailed analysis of the band structure, phonon dispersion, and electron-phonon coupling of three types of small-radius carbon nanotubes (CNTs): (5,0), (6,0), and (5,5) with diameters 3.9, 4.7, and 6.8 \AA respectively. The…

The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality…

High frequency conductivity of hot electrons in an undoped single walled achiral carbon nanotubes (CNTs) under the influence of ac-dc driven fields is considered. We investigated semiclassically by solving the Boltzmann's transport equation…

We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the…