相关论文: Localization and interaction of indirect excitons …
Spatially indirect excitons in semiconductor quantum wells are relevant to basic research and device applications because they exhibit enhanced tunability, delocalized wave functions, and potentially longer lifetimes relative to direct…
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…
We present theoretical studies of condensation of indirect excitons in a trap. Our model quantifies the effect of screening of the trap potential by indirect excitons on exciton condensation. The theoretical studies are applied to a system…
The photoluminescence dynamics of a microscopic gas of indirect excitons trapped in coupled quantum wells is probed at very low bath temperature (approximately 350 mK). Our experiments reveal the non linear energy relaxation characteristics…
Inspired by a recent experiment of localization-delocalization transition (LDT) of indirect excitons in lateral electrostatic lattices [M. Remeika \textit{et al.}, Phys. Rev. Lett. \textbf{102}, 186803 (2009)], we investigate the interplay…
We study spatially indirect excitons confined in a 10 $\mu$m wide electrostatic trap of a GaAs double quantum well. We introduce a technique to control the amplitude of the electric field interacting with the excitons electric dipole, with…
We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with…
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a…
Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create…
A simple method to create and control magnetic potentials onto coupled quantum wells is demonstrated for indirect-exciton magnetic confinement. Localized inhomogeneous magnetic potentials with periodically distributed local minima and…
We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the…
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched…
We propose the application of nonlinear optics for studies of spatially indirect excitons in coupled quantum wells. We demonstrate, that despite their vanishing oscillator strength, indirect excitons can strongly contribute to the…
We investigate the homogeneous linewidth of localized type-I excitons in type-II GaAs/AlAs superlattices. These localizing centers represent the intermediate case between quasi-two-dimensional (Q2D) and quasi-zero-dimensional localizations.…
We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice…
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such…
We demonstrate the localisation of quantum well excitons in a periodic array of linear traps using photoluminescence experiments. The excitonic traps are induced by applying spatially alternating external voltages via interdigitated metal…
Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in GaAs/AlGaAs coupled quantum wells. Above a critical density and below a critical temperature the photogenerated…
Electron-hole excitations in the surface bands of GaAs(110) are analyzed using constrained density-functional theory calculations. The results show that Frenkel-type autolocalized excitons are formed. The excitons induce a local surface…
The hydrodynamic equations for indirect excitons in the double quantum wells are studied taking into account 1) a possibility of an exciton condensed phase formation, 2) the presence of pumping, 3) finite value of the exciton lifetime, 4)…