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Quantum phase transitions in metals are often accompanied by violations of Fermi liquid behavior in the quantum critical regime. Particularly fascinating are transitions beyond the Landau-Ginzburg-Wilson concept of a local order parameter.…

强关联电子 · 物理学 2010-10-01 Matthias Vojta

We outline a general mechanism for Orbital-selective Mott transition (OSMT), the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of…

强关联电子 · 物理学 2009-03-24 Luca de' Medici , S. R. Hassan , Massimo Capone , Xi Dai

Electrons in a simple correlated system behave either as itinerant charge carriers or as localized moments. However, there is growing evidence for the coexistence of itinerant electrons and local moments in transition metals with nearly…

强关联电子 · 物理学 2011-04-12 M. Neupane , P. Richard , Z. -H. Pan , Y. Xu , R. Jin , D. Mandrus , X. Dai , Z. Fang , Z. Wang , H. Ding

The orbital-selective electronic behavior is one of the most remarkable manifestations of strong electronic correlations in multi-orbital systems. A prominent example is the orbital-selective Mott transition (OSMT), which is characterized…

强关联电子 · 物理学 2022-08-30 Evgeny A. Stepanov

We investigate the Mott transitions in two-orbital Hubbard systems. Applying the dynamical mean field theory and the self-energy functional approach, we discuss the stability of itinerant quasi-particle states in each band. It is shown that…

强关联电子 · 物理学 2009-11-11 A. Koga , K. Inaba , N. Kawakami

Phenomenological theory of the Mott transition is presented. When the critical temperature of the Mott transition is much higher than the quantum degeneracy temperature, the transition is essentially described by the Ising universality…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

The anisotropic two-orbital Hubbard model is investigated at low temperatures using high-precision quantum Monte Carlo (QMC) simulations within dynamical mean-field theory (DMFT). We demonstrate that two distinct orbital-selective Mott…

强关联电子 · 物理学 2015-06-25 N. Blümer , C. Knecht , K. Pozgajcic , P. G. J. van Dongen

By applying dynamical mean-field theory in combination with exact diagonalization at zero temperature to a half-filled Hubbard model with two orbitals having distinct noninteracting densities of states, we show that an orbital selective…

强关联电子 · 物理学 2016-03-17 Ze-Yi Song , Hunpyo Lee , Yu-Zhong Zhang

We examine whether the Mott transition of a half-filled, two-orbital Hubbard model with unequal bandwidths occurs simultaneously for both bands or whether it is a two-stage process in which the orbital with narrower bandwith localizes first…

强关联电子 · 物理学 2007-05-23 L. de' Medici , A. Georges , S. Biermann

We study the Mott transition of a mixed Bose-Fermi system of ultracold atoms in an optical lattice, where the number of (spinless) fermions and bosons adds up to one atom per lattice, n_F+n_B=1. For weak interactions, a Fermi surface…

量子气体 · 物理学 2013-05-30 Ehud Altman , Eugene Demler , Achim Rosch

Quantum materials whose properties lie beyond the celebrated Landau Fermi-liquid paradigm have been observed for decades across diverse material platforms. Finding microscopic lattice models for metallic states that exhibit such peculiar…

强关联电子 · 物理学 2026-02-25 Fabian Eickhoff

We study the asymmetric Hubbard model at half-filling as a generic model to describe the physics of two species of repulsively interacting fermionic cold atoms in optical lattices. We use Dynamical Mean Field Theory to obtain the…

强关联电子 · 物理学 2012-01-11 E. A. Winograd , R. Chitra , M. J. Rozenberg

Starting with an extended version of the Anderson lattice where the f-electrons are allowed a weak dispersion, we examine the possibility of a Mott localization of the f-electrons, for a finite value of the hybridization $V$. We study the…

强关联电子 · 物理学 2009-11-13 C. Pepin

We discuss a new class of quantum phase transitions -- Deconfined Mott Transition (DMT) -- that describe a continuous transition between a Fermi liquid metal with a generic electronic Fermi surface and an electrical insulator without Fermi…

强关联电子 · 物理学 2020-06-18 Liujun Zou , Debanjan Chowdhury

We study the conductivity, density of states, and magnetic correlations of a two dimensional, two band fermion Hubbard model using determinant Quantum Monte Carlo (DQMC) simulations. We show that an orbitally selective Mott transition…

强关联电子 · 物理学 2010-04-22 Karim Bouadim , George G. Batrouni , Richard T. Scalettar

Studies on the iron-based superconductors and related strongly correlated systems have focused attention on bad-metal normal state in proximity to antiferromagnetic order. An orbital-selective Mott phase (OSMP) has been extensively…

强关联电子 · 物理学 2022-03-14 Haoyu Hu , Lei Chen , Jian-Xin Zhu , Rong Yu , Qimiao Si

Mott transitions in the two-orbital Hubbard model with different bandwidths are investigated at finite temperatures. By means of the self-energy functional approach, we discuss the stability of the intermediate phase with one orbital…

强关联电子 · 物理学 2009-11-11 Kensuke Inaba , Akihisa Koga , Sei-ichiro Suga , Norio Kawakami

The metal-insulator transition in one dimensional fermionic systems with long-range interaction is investigated. We have focused on an excitation spectrum by the exact diagonalization technique in sectors with different momentum quantum…

强关联电子 · 物理学 2009-10-30 Yasuhiro Hatsugai

In the present paper, we systematically studied the possible Orbital selective Mott transition (OSMT) in the $t_{2g}$ system, which has three orbital degeneracy. The slave Boson mean field theory is generalized to the three band systems…

强关联电子 · 物理学 2007-05-23 Xi Dai , Gabriel Kotliar , Zhong Fang

Quantum orbital selective Mott (OSM) transitions are investigated within dynamical mean-field theory based on a two-orbital Hubbard model with different bandwidth at half filling. We find two distinct OSM phases both showing coexistence of…

强关联电子 · 物理学 2018-08-20 Ze-Yi Song , Xiu-Cai Jiang , Hai-Qing Lin , Yu-Zhong Zhang
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