相关论文: Device Model for Graphene Nanoribbon Phototransist…

Graphene nanoribbons are one-dimensional stripes of graphene with width- and edge-structure-dependent electronic properties. They can be synthesized bottom-up in solution to obtain precise ribbon geometries. Here we investigate the optical…

Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or…

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width…

The significant electron-electron interactions that characterize the {\pi}-electrons of graphene nanoribbons (GNRs) necessitate going beyond one-electron tight-binding description. Existing theories of electron-electron interactions in GNRs…

We present a tight-binding model study of a two-terminal graphene nanopore device for sequential determination of DNA bases. Using Green's function technique we investigate the changes in electronic transport properties of the device due to…

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered…

Plasmon resonance in nanopatterned single layer graphene nanoribbon (SL-GNR), double layer graphene nanoribbon (DL-GNR) and triple layer graphene nanoribbon (TL-GNR) structures is studied both experimentally and by numerical simulations. We…

Amongst the wide spectrum of potential applications of graphene, ranging from transistors and chemical-sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most…

We present a graphene photodetector for telecom applications based on a silicon photonic crystal defect waveguide. The photonic structure is used to confine the propagating light in a narrow region in the graphene layer to enhance…

We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the…

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

We implemented a nanoelectronic interface between graphene field effect transistors (FETs) and soluble proteins. This enables production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. The…

Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off…

With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied…

We analyze the thermal and electrical characteristics of the metasurface consisting of the coplanar interdigital array of the graphene microribbons (GMRs) connected by nanobridges (NBs). These nanobridges could be implemented using graphene…

Graphene nanoribbons (GNRs) with widths down to 16 nm have been characterized for their current-carrying capacity. It is found that GNRs exhibit an impressive breakdown current density, on the order of 10^8 A/cm2. The breakdown current…

If a device like a graphene nanoribbon (GNR) has all its four corners attached to electric current leads, the device becomes a quantum junction through which two electrical circuits can interact. We study such system theoretically for…

The recent fabrication of graphene nanoribbon (GNR) field-effect transistors poses a challenge for first-principles modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport…

We report novel graphene nanoribbon (GNR)/semiconductor nanowire (SNW) heterojunction light-emitting diodes (LEDs) for the first time. The GNR and SNW have a face-to-face contact structure, which has the merit of bigger active region. ZnO,…

Accurate modeling of the pi-bands of armchair graphene nanoribbons (AGNRs) requires correctly reproducing asymmetries in the bulk graphene bands as well as providing a realistic model for hydrogen passivation of the edge atoms. The commonly…