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相关论文: On the sign structure of doped Mott insulators

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Understanding the doped Mott insulator is a central challenge in condensed matter physics. In this work, we first explicitly identify a new sign structure in the $t$-$t'$-$J$ model on the square lattice that replaces the conventional Fermi…

强关联电子 · 物理学 2024-10-15 Xin Lu , Jia-Xin Zhang , Shou-Shu Gong , D. N. Sheng , Zheng-Yu Weng

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

Injecting a single hole into a one-dimensional Heisenberg spin chain is probably the simplest case of doping a Mott insulator. The motion of such a single hole will generally induce a many-body phase shift, which can be identified by an…

强关联电子 · 物理学 2016-01-06 Zheng Zhu , Qing-Rui Wang , D. N. Sheng , Zheng-Yu Weng

Mechanism of superconductivity (SC) in a purely interacting electron system has been one of the most challenging issues in condensed matter physics. In the BCS theory, the Landau's Fermi liquid is a normal state against which an SC…

强关联电子 · 物理学 2020-09-30 Hong-Chen Jiang , Shuai Chen , Zheng-Yu Weng

The Hall coefficient exhibits anomalous behavior in lightly doped Mott insulators. For strongly interacting electrons its computation has been challenged by analytical and numerical obstacles. We calculate the leading contributions in the…

强关联电子 · 物理学 2023-12-21 Ilia Khait , Sauri Bhattacharyya , Abhisek Samanta , Assa Auerbach

We show that the recently proposed doped carrier Hamiltonian formulation of the t-J model should be complemented with the constraint that projects out the unphysical states. With this new important ingredient, the previously used and…

强关联电子 · 物理学 2013-05-29 Rafael T. Pepino , Alvaro Ferraz , Evgueny Kochetov

The ground-state properties of the t-J model on a d-dimensional hypercubic lattice are examined in the limit of large d. It is found that the undoped system is an ordered antiferromagnet, and that the doped system phase separates into a…

强关联电子 · 物理学 2009-10-30 E. W. Carlson , S. A. Kivelson , Z. Nussinov , V. J. Emery

We have numerically investigated the doped t-J ladder using exact diagonalization. We have studied both the limit of strong inter-chain coupling and isotropic coupling. The ladder scales to the Luther-Emery liquid regime in the strong…

凝聚态物理 · 物理学 2007-05-23 Matthias Troyer , Hirokazu Tsunetsugu , T. M. Rice

In this article I give a pedagogical illustration of why the essential problem of high-Tc superconductivity in the cuprates is about how an antiferromagnetically ordered state can be turned into a short-range state by doping. I will start…

超导电性 · 物理学 2011-12-23 Zheng-Yu Weng

Cooper pairing instability in a Fermi liquid is well understood by the BCS theory, but pairing mechanism for doped Mott insulators still remains elusive. Previously it has been shown by density matrix renormalization group (DMRG) method…

强关联电子 · 物理学 2014-08-28 Zheng Zhu , Hong-Chen Jiang , Dong-Ning Sheng , Zheng-Yu Weng

We apply the fermionic tensor network (TN) state method to understand the strongly correlated nature in a doped Mott insulator. We conduct a comparative study of the $\sigma t$-$J$ model, in which the no-double-occupancy constraint remains…

强关联电子 · 物理学 2025-12-19 Wayne Zheng , Jia-Xin Zhang , Zheng-Yuan Yue , Zheng-Cheng Gu , Zheng-Yu Weng

The Fermi sign structure plays a crucial role for a Landau's Fermi liquid. In this work, we identify the exact sign structure for the bipartite Hubbard model at an arbitrary strength of the on-site Coulomb repulsion $U$. This general sign…

强关联电子 · 物理学 2014-10-17 Long Zhang , Zheng-Yu Weng

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-resistance, and high-temperature superconductivity in layered…

We reinvestigate a doped antiferromagnetic Mott insulator based on the slave-fermion approach of the t-J model, where antiferromagnetic spin fluctuations and doped holes are described by bosonic spinons and fermionic holons, respectively.…

强关联电子 · 物理学 2008-11-18 Chenglong Jia , Ki-Seok Kim

Marshall sign as a sole source of sign problem hidden in an antiferromagnet is explored under doping. By tracking the Marshall sign, a zero spectral weight $Z$ is revealed in the doped antiferromagnetic system. $Z=0$ is caused by a phase…

凝聚态物理 · 物理学 2007-05-23 Z. Y. Weng , D. N. Sheng , Y. C. Chen

The charge transport of electron doped Mott insulators on a triangular lattice is investigated within the t-J model based on the partial charge-spin separation fermion-spin theory. The conductivity spectrum shows a low-energy peak and the…

强关联电子 · 物理学 2009-11-10 Bin Liu , Ying Liang , Shiping Feng , Wei Yeu Chen

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

In a solid material strong interactions between the electrons can lead to surprising properties. A prime example is the Mott insulator, where the suppression of conductivity is a result of interactions and not the consequence of a filled…

其他凝聚态物理 · 物理学 2010-01-21 Robert Jördens , Niels Strohmaier , Kenneth Günter , Henning Moritz , Tilman Esslinger

Magnetic correlations of doped Mott insulators hold the key to the unusual characteristics of many quantum materials. Recent experiments with ultracold atoms in optical lattices have provided new information about the magnetic properties of…

强关联电子 · 物理学 2026-04-17 Radu Andrei , Ivan Morera , Jonathan B. Curtis , Immanuel Bloch , Eugene Demler

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different…

强关联电子 · 物理学 2007-05-23 Tiago C. Ribeiro
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