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相关论文: Photoconductivity of an intrinsic graphen

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The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon…

介观与纳米尺度物理 · 物理学 2015-05-14 P. N. Romanets , F. T. Vasko

We examine an intrinsic graphene connected to the phonon thermostat at temperature T under irradiation of thermal photons with temperature T_r, other than T. The distribution of nonequilibrium electron-hole pairs was obtained for the cases…

材料科学 · 物理学 2010-06-29 P. N. Romanets , F. T. Vasko , M. V. Strikha

Graphene is widely recognized for its ultrafast and broadband photocurrent response, but whether the broadband ultrafast characteristics are preserved at mid-infrared wavelengths with photon energies below the optical phonon energy remains…

We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under far- and mid-infrared (IR) radiation in a wide range of its intensities. The energy distributions of carriers are calculated using a…

材料科学 · 物理学 2010-06-29 A. Satou , F. T. Vasko , V. Ryzhii

Heating of carriers in an intrinsic graphene under dc electric field is considered taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions due to thermal…

介观与纳米尺度物理 · 物理学 2015-05-13 O. G. Balev , F. T. Vasko , V. Ryzhii

Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either…

介观与纳米尺度物理 · 物理学 2013-01-30 Marcus Freitag , Tony Low , Fengnian Xia , Phaedon Avouris

For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the…

Hot carriers in a doped graphene under dc electric field is described taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions caused by thermal radiation.…

介观与纳米尺度物理 · 物理学 2010-08-04 Oleg G. Balev , Fedir T. Vasko

We present a numerical study on the intraband optical conductivity of hot carriers at quasi-equilibria in photoexcited graphene based on the semiclassical Boltzmann transport equations (BTE) with the aim of understanding the effects of…

介观与纳米尺度物理 · 物理学 2021-02-24 Masatsugu Yamashita , Chiko Otani

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the…

The heating of carriers in an intrinsic graphene under an abrupt switching off a dc electric field is examined taking into account both the energy relaxation via acoustic and optic phonons and the interband generation-recombination…

介观与纳米尺度物理 · 物理学 2015-05-20 P. N. Romanets , F. T. Vasko

We present a nonperturbative quasi-classical theory of graphene photoconductivity. We consider the influence of low-frequency (microwave, terahertz, mid-infrared) radiation on the static conductivity of a uniform graphene layer and…

介观与纳米尺度物理 · 物理学 2021-06-09 S. A. Mikhailov

The interband and intraband conductivities of doped graphene were theoretically investigated beyond the linear response. The new dependences of induced currents on frequency and amplitude of external electric field, the graphene temperature…

介观与纳米尺度物理 · 物理学 2013-08-19 B. M. Ruvinskii , M. A. Ruvinskii

We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density and mobility of p-type CVD graphene samples. Time-resolved terahertz…

材料科学 · 物理学 2015-06-23 J. N. Heyman , J. D. Stein , Z. S. Kaminski , A. R. Banman , A. M. Massari , J. T. Robinson

We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier…

We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity…

介观与纳米尺度物理 · 物理学 2021-10-13 S. Candussio , L. E. Golub , S. Bernreuter , T. Jötten , T. Rockinger , K. Watanabe , T. Taniguchi , J. Eroms , D. Weiss , S. D. Ganichev

We present the non-linear DC photoconductivity of graphene under strong infra-red (IR) radiation. The photoconductivity is obtained as the response to a strong DC electric field, with field strengths outside of the linear-response regime,…

介观与纳米尺度物理 · 物理学 2025-06-25 Lukas Broers , Ludwig Mathey

We propose an explicitly solvable model for collinear scattering of photoexcited carriers in intrinsic graphene irradiated by monochromatic light. We find that the collinear scattering rate is directly proportional to the photocarrier…

介观与纳米尺度物理 · 物理学 2016-11-30 Maxim Trushin

The broadband and ultrafast photoresponse of graphene has been extensively studied in recent years, although the photoexcited carrier dynamics is still far from being completely understood. Different experimental approaches imply either one…

介观与纳米尺度物理 · 物理学 2017-08-22 Sergey Menabde , Hyunwoo Cho , Namkyoo Park

We analyze intrinsic nonlinearities in two-dimensional polaritonic materials interacting with an optical wave. Focusing on the case of graphene, we show that the second-order nonlinear optical conductivity due to carrier density…

介观与纳米尺度物理 · 物理学 2019-07-24 Christian Wolff , Christos Tserkezis , N. Asger Mortensen
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