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We theoretically argue that, in doped AB bilayer graphene, the electron-electron coupling can give rise to the spontaneous formation of fractional metal phases. These states, being generalizations of a more common half-metal, have a Fermi…

介观与纳米尺度物理 · 物理学 2023-04-19 A. L. Rakhmanov , A. V. Rozhkov , A. O. Sboychakov , Franco Nori

Void-defect is a possible origin of ferromagnetic feature on pure carbon materials. In our previous paper, void-defect on graphene-nanoribbon show highly polarized spin configuration. In this paper, we studied cases for graphene molecules…

星系天体物理 · 物理学 2021-07-06 Norio Ota , Aigen Li , Laszlo Nemes , Masaaki Otsuka

Graphene in the presence of a strong external magnetic field is a unique attraction for investigations of the fractional quantum Hall (fQH) states with odd and even denominators of the fraction. Most of the attempts to understand Graphene…

强关联电子 · 物理学 2019-09-25 Saurabh Maiti , Tigran Sedrakyan

First-principles density functional calculations for graphene and defected graphene are used to examine when the quasi-2D electrons near the Fermi energy in graphene could be represented by massless fermions obeying a Dirac-Weyl (DW)…

强关联电子 · 物理学 2007-11-06 M. W. C. Dharma-wardana

Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems…

介观与纳米尺度物理 · 物理学 2010-09-10 Joice da Silva-Araújo , H. Chacham , R. W. Nunes

This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…

介观与纳米尺度物理 · 物理学 2012-05-28 Maxim Trushin

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…

材料科学 · 物理学 2010-02-11 Fengnian Xia , Damon B. Farmer , Yu-ming Lin , Phaedon Avouris

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

材料科学 · 物理学 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

It has been found that periodically closely spaced vacancies on a graphite sheet cause a significant rearrange-ment of its electronic spectrum: metallic waveguides with a high density of states near the Fermi level are formed along the…

材料科学 · 物理学 2007-05-23 L. A. Chernozatonskii , P. B. Sorokin , E. E. Belova , J. Bruning , A. S. Fedorov

We show that patterned defects can be used to disrupt the sub-lattice symmetry of graphene so as to open up a band gap. This way of modifying graphene's electronic structure does not rely on external agencies, the addition of new elements…

介观与纳米尺度物理 · 物理学 2010-09-09 David J. Appelhans , Zhibin Lin , Mark T. Lusk

The pristine graphene is strongly diamagnetic. However, graphene with single carbon atom defects could exhibit paramagnetism with local magnetic moments ~ 1.5 per vacancy1-6. Theoretically, both the electrons and electrons of graphene…

材料科学 · 物理学 2017-02-13 Yu Zhang , Si-Yu Li , Wen-Tian Li , Jia-Bin Qiao , Wen-Xiao Wang , Long-Jin Yin , Lin He

Several experiments have recently found room-temperature ferromagnetism in graphite-like carbon based materials. This paper offers a model explaining such ferromagnetism by using an asymmetric nano-graphene. Our first typical model is…

介观与纳米尺度物理 · 物理学 2011-01-28 Norio Ota , Narjes Gorjizadeh , Yoshiyuki Kawazoe

We report our theoretical calculations on the temperature and energy dependent electrical conductivity of gapped graphene within the framework of Boltzmann transport formalism. Since screening effects have known to be of vital importance in…

介观与纳米尺度物理 · 物理学 2015-04-07 Digish K Patel , A C Sharma , S S Z Ashraf

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…

介观与纳米尺度物理 · 物理学 2011-04-07 F. Guinea , M. I. Katsnelson , A. K. Geim

We discuss the possibility of superconductivity in graphene taking into account both electron-phonon and electron-electron Coulomb interactions. The analysis is carried out assuming that the Fermi energy is far away from the Dirac points,…

超导电性 · 物理学 2011-12-13 M. Einenkel , K. B. Efetov

We investigate the occurrence of magnetic and charge density wave instabilities in rhombohedral-stacked multilayer (three to eight layers) graphene by first principles calculations including exact exchange. Neglecting spin-polarization, an…

材料科学 · 物理学 2017-03-07 Betül Pamuk , Jacopo Baima , Francesco Mauri , Matteo Calandra

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

介观与纳米尺度物理 · 物理学 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

Using first-principles plane wave calculations we predict that electronic and magnetic properties of graphene nanoribbons can be affected by defect-induced itinerant states. The band gaps of armchair nanoribbons can be modified by hydrogen…

介观与纳米尺度物理 · 物理学 2008-08-12 M. Topsakal , E. Akturk , H. Sevincli , S. Ciraci

The shortcomings of mono-component systems, e.g., the gapless nature of graphene, the lack of air-stability in phosphorene, etc. have drawn great attention toward stacked materials expected to show interesting electronic and optical…

介观与纳米尺度物理 · 物理学 2020-12-24 Maryam Mahdavifar , Sima Shekarforoush , Farhad Khoeini

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising…

材料科学 · 物理学 2016-04-21 Yan Yin , Zengguang Cheng , Li Wang , Kuijuan Jin , Wenzhong Wang