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The structures and electron properties of new superlattices formed on graphene by adsorbed hydrogen molecules are theoretically described. It has been shown that superlattices of the (n, 0) zigzag type with linearly arranged pairs of H…

材料科学 · 物理学 2007-05-23 L. A. Chernozatonskii , P. B. Sorokin , E. E. Belova , J. Bruning , A. S. Fedorov

Electronic properties of two-dimensional graphene superlattice made with partial hydrogenation were thoroughly studied via Density Functional Tight Binding approach (DFTB) which incorporates the tight-binding method into the density…

介观与纳米尺度物理 · 物理学 2015-05-18 Ming Yang , Argo Nurbawono , Chun Zhang , Ariando , Yuan Ping Feng

Zigzag graphene nanoribbons patterned on graphane are studied using spin-polarized ab initio calculations. We found that the electronic and magnetic properties of the graphene/graphane superlattice strongly depends on the degree of…

介观与纳米尺度物理 · 物理学 2010-10-19 A. D. Hernandez-Nieves , B. Partoens , F. M. Peeters

Graphene - a monolayer of carbon atoms densely packed into a hexagonal lattice - has one of the strongest possible atomic bonds and can be viewed as a robust atomic-scale scaffold, to which other chemical species can be attached without…

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

Carbon nanostructures, such as nanotubes and graphene nanoribbons, exhibit unique electronic and optical properties that make them very promising candidates for terahertz components. However, carbon nanotube and nanoribbon monolithic…

介观与纳米尺度物理 · 物理学 2026-05-26 Vasil A. Saroka , Olivia Pulci , Marco D'Alessandro

Heuslers are a prominent family of multi-functional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same crystalline structure, yet quite different electronic…

材料科学 · 物理学 2019-06-19 Abhishek Sharan , Zhigang Gui , Anderson Janotti

By combining experimental techniques with ab-initio density functional theory calculations, we describe the Si/Ag(111) two-dimensional system in terms of a sp2-sp3 crystalline form of silicon characterized by a vertically distorted…

介观与纳米尺度物理 · 物理学 2013-08-20 E. Cinquanta , E. Scalise , D. Chiappe , C. Grazianetti , B. van den Broek , M. Houssa , M. Fanciulli , A. Molle

We study the effect of sublattice symmetry breaking on the electronic, magnetic and transport properties of two dimensional graphene as well as zigzag terminated one and zero dimensional graphene nanostructures. The systems are described…

介观与纳米尺度物理 · 物理学 2013-05-30 D. Soriano , J. Fernández-Rossier

Recent experimental observations have reported that, rather than randomly distributed, nitrogen atoms may prefer to be located on one of the two sub-lattices of graphene. It has been suggested that such a preference may present a possible…

介观与纳米尺度物理 · 物理学 2015-09-30 James A. Lawlor , Mauro S. Ferreira

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution…

材料科学 · 物理学 2008-11-05 Masa Ishigami , J. H. Chen , W. G. Cullen , M. S. Fuhrer , E. D. Williams

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness.…

介观与纳米尺度物理 · 物理学 2016-08-17 N. -C. Yeh , C. -C. Hsu , M. L. Teague , J. -Q. Wang , D. A. Boyd , C. -C. Chen

Using the ab initio pseudopotential density functional method, we investigate the functionalization of halogen molecules into graphene-based nanostructures with zigzag and armchair edges. We find that halogen molecules adsorb through…

材料科学 · 物理学 2015-05-19 Hoonkyung Lee , Marvin L. Cohen , Steven G. Louie

Graphene is one of the most important materials in science today due to its unique and remarkable electronic, thermal and mechanical properties. However in its pristine state, graphene is a gapless semiconductor, what limits its use in…

材料科学 · 物理学 2014-08-13 P. A. S. Autreto , J. M. de Sousa , D. S. Galvao

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

介观与纳米尺度物理 · 物理学 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

We investigate a planar heterostructure composed of two graphene films separated by a narrow-gap semiconductor ribbon. We show that there is no the Klein paradox when the Dirac points of the Brillouin zone of graphene are in a band gap of a…

材料科学 · 物理学 2015-05-13 P. V. Ratnikov , A. P. Silin

Hydrogenated graphene, graphane, is studied on oxygen-terminated silicon dioxide substrate using ab initio calculations. A structure with hydrogenation only on one side of the graphene layer is found stable and its hydrogen configurations…

介观与纳米尺度物理 · 物理学 2011-07-13 M. Ijäs , P. Havu , A. Harju , P. Pasanen

Nanoscience offers a unique opportunity to design modern materials from the bottom up, via low-cost, solution processed assembly of nanoscale building blocks. These systems promise electronic band structure engineering using not only the…

介观与纳米尺度物理 · 物理学 2018-08-06 Yingjie Zhang , Youngseok Kim , Matthew J. Gilbert , Nadya Mason

We present theoretical simulations of the electronic properties of graphene-like two-dimensional (2D) carbon networks with a periodic arrangement of defect lines formed by alternating four- and eight-membered rings. These networks can be…

介观与纳米尺度物理 · 物理学 2025-04-14 Roland Gillen , Janina Maultzsch

Hydrogenation has proven to be an effective tool to open the bandgap of graphene. In the present density functional study we demonstrate that single-side-hydrogenated graphene is a semiconductor with an indirect bandgap of 1.89 eV, in…

材料科学 · 物理学 2011-03-01 Bhalchandra S. Pujari , Sergey Gusarov , Michael Brett , Andriy Kovalenko
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