相关论文: Spin-Valley Kondo Effect in Multi-electron Silicon…

We propose that two-channel orbital Kondo ``spin'' 1/2 conductance can be measured in a quantum dot at Coulomb Blockade with an odd number of electrons with contacts in a pillar configuration, if an orthogonal magnetic field induces an…

Progress in the fabrication of nanometer-scale electronic devices is opening new opportunities to uncover the deepest aspects of the Kondo effect, one of the paradigmatic phenomena in the physics of strongly correlated electrons. Artificial…

The effect of a magnetic field on the spectral density of a $\rm{S=1/2}$ Kondo impurity is investigated at zero and finite temperatures by using Wilson's numerical renormalization group method. A splitting of the total spectral density is…

We discuss the physics of a of a spin-1 quantum dot, coupled to two metallic leads and develop a simple model for the temperature dependence of its conductance. Such quantum dots are described by a two-channel Kondo model with asymmetric…

We investigate a lateral semiconductor quantum dot with a large number of electrons in the limit of strong coupling to the leads. A Kondo effect is observed and can be tuned in a perpendicular magnetic field. This Kondo effect does not…

The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…

The interaction between localized spins on a quantum dot and free electrons in the reservoirs forms a many-particle entangled system giving rise to the Kondo effect. Here, we investigate electron transport in the third shell of a…

Non-equilibrium spin transport through an interacting quantum dot is analyzed. The coherent spin oscillations in the dot provide a generating source for spin current. In the interacting regime, the Kondo effect is influenced in a…

By coupling on chip a carbon nanotube to a quantum noise detector, a superconductor-insulator-superconductor junction, via a resonant circuit, we measure the emission noise of a carbon nanotube quantum dot in the Kondo regime. The signature…

Spin-resolved scanning tunneling microscopy is employed to quantitatively determine the spin-polarization of the magnetic field-split Kondo state. Tunneling conductance spectra of a Kondo-screened magnetic atom are evaluated within a simple…

We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a…

We consider the spin and orbital Kondo effect in a parallel arrangement of two strongly electrostatically coupled quantum dots. Increasing the exchange of electrons between the dots through the attached leads induces the transition between…

In a single state of a quantum dot the Kondo effect arises due to the spin-degeneracy, which is present if the dot is occupied with one electron (N = 1). The eigenstates of a carbon nanotube quantum dot possess an additional orbital…

The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When…

We report on cotunneling spectroscopy magnetoconductance measurements of multi-hole ultraclean carbon nanotube quantum dots in the SU(4) Kondo regime with strong spin-orbit coupling. Successive shells show a gradual weakening of the Kondo…

We investigate theoretically the linear conductance of a two-level quantum dot as a function of the gate voltage and different strength of coupling to the external electronic system (the reservoir). Apart from the weak coupling regime,…

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…

We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…

The Zeeman splitting of localized electrons in a quantum dot in the Kondo regime is studied using a new slave-boson formulation. Our results show that the Kondo peak splitting depends on the gate potential applied to the quantum dot and on…

We show a detailed investigation of the split Kondo effect in a carbon nanotube quantum dot with multiple gate electrodes. It is found that the splitting decreases for increasing magnetic field, to result in a recovered zero-bias Kondo…