相关论文: Spin current and electrical polarization in GaN do…

The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…

We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention to the impact of electric polarization rotation in a…

First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-metallic full-Heusler alloy Co2CrAl and ferroelectric…

We predict that the flow of unpolarized current in electron-doped GaAs and InP at room temperature is unstable at high electric fields to the dynamic formation of spin-polarized current pulses. Spin-polarized current is spontaneously…

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…

We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…

We theoretically study the spin current between two polarized Fermi gases with repulsive interactions near the itinerant ferromagnetic phase transition. We consider a two-terminal model where the left reservoir is fixed to be fully…

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…

We investigated spin-resolved electronic transport through a junction composed of a nonmagnetic metal electrode and a zigzag carbon nanotube by means of self-consistent Green's function method in the tight binding approximation and the…

We investigate ballistic spin transport in a two dimensional electron gas system through magnetic barriers of various geometries using the transfer matrix method. While most of the previous studies have focused on the effect of magnetic…

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin…

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque…

We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…

This is an overview of current-induced spin polarization in gyrotropic semiconductor nanostructures. Such a spin polarization as response to a charge current may be classified as the inverse of the spin-galvanic effect, and sometimes is…

We propose a device acting as a spin valve which is based on a double quantum dot structure with parallel topology. Using the exact analytical solution for the noninteracting case we argue that, at a certain constellation of system…

We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical…

We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…

Te is a naturally p-doped semiconductor with a chiral structure, where an electrical current causes the conduction electrons to become spin polarized parallel to the transport direction. In this paper, we present a comprehensive theoretical…

We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free…