相关论文: Bipolar spintronics: From spin injection to spin-c…
Spin insulatronics covers efforts to generate, detect, control, and utilize high-fidelity pure spin currents and excitations inside magnetic insulators. Ultimately, the new findings may open doors for pure spin-based information and…
The research landscape of magnetism has been recently enriched by the discovery of altermagnetism. It is an unconventional phase of matter characterized by a d-wave (or higher even-parity-wave) collinear compensated spin ordering, which…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
Over the past decade a large family of spintronic devices have been proposed as candidates for replacing CMOS for future digital logic circuits. Using the recently developed Modular Approach framework, we investigate and identify the…
The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals,…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
Spin transport in superconductors offers a compelling platform to merge the dissipationless nature of superconductivity with the functional promise of spin-based electronics. A significant challenge in achieving spin polarisation in…
In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
Orbitronics explores the control and manipulation of electronic orbital angular momentum in solid-state systems, opening new pathways for information processing and storage. One significant advantage of orbitronics over spintronics is that…
Magnetoelectronics is mainly digital, i.e. governed by up and down magnetizations. In contrast, analogue magnetoelectronics makes use of phenomena occuring for non-collinear magnetization configurations. Here we review theories which have…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
Development of future sensor, memory, and computing nanodevices based on novel physical concepts is one of the significant research endeavors in solid-state research. The field of spintronics is one such promising area of nanoelectronics…
Recent progress in physics on spin dependent transport in magnetic nanostructures is reviewed. Special attention is paid on the spin accumulation and spin current caused by spin injection into non-magnetic metals and semiconductors and…
A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…
Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…