中文
相关论文

相关论文: Valley Dependent Optoelectronics from Inversion Sy…

200 篇论文

Optical rectification of intense, circularly polarized light penetrating a material generates a static magnetic field aligned with the light's direction and proportional to its intensity. Recent experiments have unveiled a substantial,…

光学 · 物理学 2023-10-16 R. Merlin

In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…

介观与纳米尺度物理 · 物理学 2017-03-07 Xing-Tao An , Jiang Xiao , M. W. -Y. Tu , Hongyi Yu , Vladimir I. Fal'ko , Wang Yao

The unique sensitivity of optical response to different types of symmetry breaking can be used to detect and identify spontaneously ordered many-body states in bilayer graphene. We predict a strong response at optical frequencies, sensitive…

介观与纳米尺度物理 · 物理学 2011-08-31 Rahul Nandkishore , Leonid Levitov

Bending loss is one of the serious problems for constructing nanophotonic integrated circuits. Recently, many works reported that valley photonic crystals (VPhCs) enable significantly high transmission via 120-degree sharp bends. However,…

光学 · 物理学 2025-01-22 Wei Dai , Taiki Yoda , Yuto Moritake , Masaaki Ono , Eiichi Kuramochi , Masaya Notomi

Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and…

Recent angle resolved photoemission spectroscopy measurements have identified an inversion symmetry breaking Weyl semimetal phase in TaAs and NbAs. In an inversion symmetry breaking Weyl semimetal the left and the right handed Weyl points…

强关联电子 · 物理学 2024-03-12 Pallab Goswami , Gargee Sharma , Sumanta Tewari

Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can…

介观与纳米尺度物理 · 物理学 2021-07-07 Fionnuala Solomon , Stephen R. Power

Electrons are offered a valley degree of freedom in presence of particular lattice structures. Manipulating valley degeneracy is the subject matter of an emerging field of investigation, mostly focused on charge transport in graphene. In…

强关联电子 · 物理学 2012-04-18 Zengwei Zhu , Aurelie Collaudin , Benoit Fauque , Woun Kang , Kamran Behnia

Based on the multiband semiconductor Bloch equations a microscopic approach to high-harmonic generation in crystalline solids which is able to properly describe degenerate bands and band crossings is presented and analyzed. It is well-known…

介观与纳米尺度物理 · 物理学 2021-02-10 Le Huu Thong , Cong Ngo , Huynh Thanh Duc , Xiaohong Song , Torsten Meier

Ferroelectricity, a hallmark of spontaneous inversion-symmetry breaking, has been a central concept in condensed matter physics and functional materials research, yet recent discoveries are revealing that switchable polarization can emerge…

材料科学 · 物理学 2026-05-11 Yudi Yang , Changming Ke , Shi Liu

Electronic localization is numerically studied in disordered bilayer graphene with an electric-field induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external…

介观与纳米尺度物理 · 物理学 2009-11-13 Mikito Koshino

Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known…

Recent years have witnessed a great interest in orbital related electronics (also termed as orbitronics). In the current work, we present a first-principles density functional theory calculation on the orbital magnetic moments, intrinsic…

材料科学 · 物理学 2025-04-03 X. Mu , J. Zhou

Symmetry breaking is an effective tool for tuning the transport and topological properties of 2D layered materials. Among these materials, twisted bilayer graphene (TBG) has emerged as a promising platform for new physics, characterized by…

介观与纳米尺度物理 · 物理学 2024-06-06 Cunyuan Jiang , Matteo Baggioli , Qing-Dong Jiang

Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of…

We demonstrate inter-valley Bloch oscillation (BO) and Landau-Zener tunneling (LZT) in an optically-induced honeycomb lattice with a refractive index gradient. Unlike previously observed BO in a gapped square lattice, we show non-adiabatic…

We analyze theoretically the electronic properties of Aharonov-Bohm rings made of graphene. We show that the combined effect of the ring confinement and applied magnetic flux offers a controllable way to lift the orbital degeneracy…

介观与纳米尺度物理 · 物理学 2007-12-06 P. Recher , B. Trauzettel , A. Rycerz , Ya. M. Blanter , C. W. J. Beenakker , A. F. Morpurgo

We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observed a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a…

介观与纳米尺度物理 · 物理学 2009-11-13 Z. Q. Li , E. A. Henriksen , Z. Jiang , Z. Hao , M. C. Martin , P. Kim , H. L. Stormer , D. N. Basov

The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal…

介观与纳米尺度物理 · 物理学 2024-09-24 San-Dong Guo Xiao-Shu Guo , Guangzhao Wang

We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site…

介观与纳米尺度物理 · 物理学 2022-06-17 Fei Wan , Xinru Wang , Liehong Liao , Jiayan Zhang , M. N. Chen , G. H. Zhou , Z. B. Siu , Mansoor B. A. Jalil , Yuan Li