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Electron transport in nonideal quantum wells (QW) with large-scale variations of energy levels is studied when two subbands are occupied. Although the mean fluctuations of these two levels are screened by the in-plane redistribution of…

介观与纳米尺度物理 · 物理学 2009-10-31 O. G. Balev , F. T. Vasko , Flavio Aristone , Nelson Studart

The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is…

The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…

介观与纳米尺度物理 · 物理学 2007-05-23 Emiliano Papa , Tilo Stroh

We propose an on-demand single photon source for quantum cryptography using a metal-insulator-semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped quantum well, and the cylindrical gate under…

量子物理 · 物理学 2009-11-11 Binhui Hu , C. H. Yang , M. J. Yang

In this paper, we present a mathematical approach in estimating transition energy of type-I core-shell quantum dots (CSQDs) in strong and weak confinement of charge carriers within the core materials. We will do this by using effective-mass…

介观与纳米尺度物理 · 物理学 2019-05-24 T. Shelawati , M. S. Nurisya , C. Kar Tim , A. K. Mazliana

We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a…

介观与纳米尺度物理 · 物理学 2019-02-08 D. J. O. Göransson , M. Heurlin , B. Dalelkhan , S. Abay , M. E. Messing , V. F. Maisi , M. T. Borgström , H. Q. Xu

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…

介观与纳米尺度物理 · 物理学 2007-05-23 V. C. Chan , D. R. McCamey , T. M. Buehler , A. J. Ferguson , D. J. Reilly , A. S. Dzurak , R. G. Clark , C. Yang , D. N. Jamieson

I present an informal discussion of various cases where two-dimensional surface metal-insulator structural and charge-density-wave instabilities driven by partly filled surface states have been advocated. These include reconstructions of…

凝聚态物理 · 物理学 2007-05-23 E. TOSATTI

We study quantum optical properties of the single-walled carbon nanotube (SWCNT) by introducing the effective interaction between the quantized electromagnetic field and the confined electrons in the SWCNT. Our purpose is to explore the…

介观与纳米尺度物理 · 物理学 2009-04-30 Z. L. Guo , Z. R. Gong , C. P. Sun

We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic…

In the 1960s, it was proposed that in small indirect band-gap materials, excitons can spontaneously form because the density of carriers is too low to screen the attractive Coulomb interaction between electrons and holes. The result is a…

材料科学 · 物理学 2024-05-31 Zhi Li , Muhammad Nadeem , Zengji Yue , David Cortie , Michael Fuhrer , Xiaolin Wang

Executing quantum logic in cryogenic quantum computers requires a continuous energy supply from room-temperature control electronics. This dependence on external energy sources creates scalability limitations due to control channel density…

量子物理 · 物理学 2026-01-28 Yaniv Kurman , Kieran Hymas , Arkady Fedorov , William J. Munro , James Quach

We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…

介观与纳米尺度物理 · 物理学 2017-01-20 D. Kamburov , K. W. Baldwin , K. W. West , M. Shayegan , L. N. Pfeiffer

We analyze a single electron transistor composed of two semi-infinite one dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the…

强关联电子 · 物理学 2009-11-10 Jaeuk U. Kim , Ilya V. Krive , Jari M. Kinaret

Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a…

介观与纳米尺度物理 · 物理学 2020-01-08 Krzysztof Pomorski , Panagiotis Giounanlis , Elena Blokhina , Imran Bashir , Dirk Leipold , Robert Bogdan Staszewski

We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly…

介观与纳米尺度物理 · 物理学 2013-10-22 G. Granger , S. A. Studenikin , A. Kam , A. S. Sachrajda , P. J. Poole

We study a superconducting single-electron transistor (SSET) which is coupled to a LC-oscillator via the phase difference across one of the Josephson junctions. This leads to a strongly anharmonic coupling between the SSET and the…

超导电性 · 物理学 2012-05-02 M. Marthaler , J. Leppäkangas , J. H. Cole

Progress toward the realization of quantum computers requires persistent advances in their constituent building blocks - qubits. Novel qubit platforms that simultaneously embody long coherence, fast operation, and large scalability offer…

The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…

介观与纳米尺度物理 · 物理学 2024-05-06 Olivio Chiatti , Johannes Boy , Christian Heyn , Wolfgang Hansen , Saskia F. Fischer

A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The…

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