Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor
强关联电子
2009-11-10 v3
摘要
We analyze a single electron transistor composed of two semi-infinite one dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the sequential approximation when the system's dynamics can be described by a master equation. We show that the steady state occupation probabilities in the strongly interacting regime depend only on the energies of the states and follow a universal form that depends on the source-drain voltage and the interaction strength.
引用
@article{arxiv.cond-mat/0302049,
title = {Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor},
author = {Jaeuk U. Kim and Ilya V. Krive and Jari M. Kinaret},
journal= {arXiv preprint arXiv:cond-mat/0302049},
year = {2009}
}
备注
4 pages, 3 figures. To appear in the Phys. Rev. Lett