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相关论文: Half-metallic silicon nanowires

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Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…

材料科学 · 物理学 2025-06-23 Zhenzhou Guo , Xiaotian Wang , Wenhong Wang , Gang Zhang , Xiaodong Zhou , Zhenxiang Cheng

We investigate the effect of Mn substitution in Fe$_2$Ti$_{1-x}$Mn$_x$Sn on electronic structure and magnetic and electrical transport properties. The spin-polarized density of states calculations using density-functional theory (DFT)…

材料科学 · 物理学 2025-08-20 Kulbhushan Mishra , Shishir Kumar Pandey , S. Chaudhuri , Rajeev Rawat , P. A. Bhobe

Alloying effects by T=Mn,Co,Ni-substitution on FeS$_2$ have been investigated using density-functional calculations. The ferromagnetic alloys Fe$_{1-x}$T$_x$S$_2$ have been investigated for concentrations…

材料科学 · 物理学 2015-12-16 Abdesalem Houari , Peter E. Blöchl

We consider a semiconducting carbon nanotube (CNT) laying on a ferromagnetic insulating sub-strate with one end depassing the substrate and suspended over a metallic gate. We assume that the polarised substrate induces an exchange…

介观与纳米尺度物理 · 物理学 2015-10-27 F. Pistolesi , R. Shekhter

Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…

We theoretically propose a one-dimensional electronic nanodevice inspired in recently fabricated semiconductor-superconductor-ferromagnetic insulator (SE-SC-FMI) hybrid heterostructures, and investigate its zero-temperature transport…

介观与纳米尺度物理 · 物理学 2025-11-19 Javier Feijóo , Aníbal Iucci , Alejandro M. Lobos

We study the time-development processes of spin and charge transport phenomena in a topological Dirac semimetal attached to a ferromagnetic insulator with a precessing magnetization. Compared to conventional normal metals, topological Dirac…

材料科学 · 物理学 2020-01-01 Takahiro Misawa , Kentaro Nomura

The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the…

材料科学 · 物理学 2018-01-08 Mehmet Aras , Çetin Kılıç

This work presents results for the magnetic properties of the compound GeTe doped with 3d transition metals V, Cr and Mn from the viewpoint of potential application in spintronics. We report a systematic density-functional study of the…

材料科学 · 物理学 2012-09-06 Y. Liu , S. K. Bose , J. Kudrnovský

Our predictions, based on density-functional calculations, reveal that surface doping of ZnO nanowires with Bi leads to a linear-in-$k$ splitting of the conduction-band states, through spin-orbit interaction, due to the lowering of the…

材料科学 · 物理学 2017-06-07 Mehmet Aras , Sümeyra Güler-Kılıç , Çetin Kılıç

After making a cold weld by pressing two clean metal surfaces together, upon gradually separating the two pieces a metallic nanowire is formed, which progressively thins down to a single atom before contact is lost. In previous experiments…

介观与纳米尺度物理 · 物理学 2009-11-07 A. I. Yanson , I. K. Yanson , J. M. van Ruitenbeek

We use a previously proposed theory for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. First we show that a mechanism in which spin valve performance at finite…

介观与纳米尺度物理 · 物理学 2014-09-11 Karin Everschor-Sitte , Matthias Sitte , Allan H. MacDonald

Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have…

介观与纳米尺度物理 · 物理学 2021-02-25 Benedikt Tissot , Guido Burkard

We performed an extensive first-principles study of nanowires in various pentagonal structures by using pseudopotential plane wave method within the density functional theory. Our results show that nanowires of different types of elements,…

材料科学 · 物理学 2009-11-07 Prasenjit Sen , O. Gulseren , T. Yildirim , Inder P. Batra , S. Ciraci

The exploitation of the spin in charge-based systems is opening revolutionary opportunities for device architecture. Surprisingly, room temperature electrical transport through magnetic nanowires is still an unresolved issue. Here, we show…

材料科学 · 物理学 2009-11-10 Varlei Rodrigues , Jefferson Bettini , Paulo C. Silva , Daniel Ugarte

Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…

材料科学 · 物理学 2023-03-24 H. Meer , O. Gomonay , A. Wittmann , M. Kläui

Doped SrTiO3 becomes a metal at extremely low doping concentrations n and is even superconducting with the superconducting transition temperature adopting a dome-like shape with the carrier concentration. It is shown here within the…

材料科学 · 物理学 2019-10-08 Annette Bussmann-Holder , Hugo Keller , Arndt Simon , Krystian Roleder , Krzysztof Szot

Nodal-line semimetals are topologically non-trivial states of matter featuring band crossings along a closed curve, i.e. nodal-line, in momentum space. Through a detailed analysis of the electronic structure, we show for the first time that…

Topological crystalline insulators (TCI) possess electronic states protected by crystal symmetries, rather than time-reversal symmetry. We show that the transition metal oxides with heavy transition metals are able to support nontrivial…

强关联电子 · 物理学 2015-06-12 Mehdi Kargarian , Gregory A. Fiete

Density functional calculations were performed to systematically study a series of finite and infinite cluster-assembled silicon nanotubes (SiNTs). One-dimensional SiNTs can be prepared by proper assembly of hydrogenated cage-like silicon…

介观与纳米尺度物理 · 物理学 2019-08-17 Lingju Guo , Xiaohong Zheng , Chunsheng Liu , Zhi Zeng