We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas.
@article{arxiv.1105.3131,
title = {Voltage controlled terahertz transmission through GaN quantum wells},
author = {T. Laurent and R. Sharma and J. Torres and P. Nouvel and S. Blin and L. Varani and Y. Cordier and M. Chmielowska and S. Chenot and JP Faurie and B. Beaumont and P. Shiktorov and E. Starikov and V. Gruzinskis and V. Korotyevyev and V. Kochelap},
journal= {arXiv preprint arXiv:1105.3131},
year = {2015}
}