The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
@article{arxiv.0711.0438,
title = {Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells},
author = {D. Seliuta and B. Cechavicius and J. Kavaliauskas and G. Krivaite and I. Grigelionis and S. Balakauskas and G. Valusis and B. Sherliker and M. P. Halsall and M. Lachab and S. P. Khanna and P. Harrison and E. H. Linfield},
journal= {arXiv preprint arXiv:0711.0438},
year = {2007}
}
Comments
4 pages, 2 figures; presented in the 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius