揭示$^{34}$Si中入侵者形变$0^+_2$态
核实验
2012-09-03 v2
摘要
在{\sc Ganil/Lise3}设施上,通过新发现的Al中半衰期为26(1) ms的同核异能素的衰变,布居了Si中的态。同时探测对使得能够确定激发能E()=2719(3) keV和半衰期T=19.4(7) ns,由此推导出电单极强度(E0)=13.0(0.9)。观察到态衰变到基态和新观测到的态(通过607(2) keV跃迁),其比率R()=1380(717)。综合所有信息,发现态与态弱混合,且形变参数=0.29(4)较大,与使用允许跨越N=20壳隙的\textit{np-nh}激发的新的{\sc sdpf-u-mix}相互作用的壳模型计算结果吻合良好。
引用
@article{arxiv.1206.6572,
title = {Unveiling the intruder deformed 0$^+_2$ state in $^{34}$Si},
author = {F. Rotaru and F. Negoita and S. Grévy and J. Mrazek and S. Lukyanov and F. Nowacki and A. Poves and O. Sorlin and C. Borcea and R. Borcea and A. Buta and L. Caceres and S. Calinescu and R. Chevrier and Zs. Dombradi and J. M. Daugas and D. Lebhertz and Y. Penionzhkevich and C. Petrone and D. Sohler and M. Stanoiu and J. C. Thomas},
journal= {arXiv preprint arXiv:1206.6572},
year = {2012}
}
备注
5 pages, 3 figures, accepted for publication in Physical Review Letters