Two-Dimensional Wigner Crystal in Anisotropic Semiconductor
介观与纳米尺度物理
2009-10-31 v1 强关联电子
摘要
We investigate the effect of mass anisotropy on the Wigner crystallization transition in a two-dimensional (2D) electron gas. The static and dynamical properties of a 2D Wigner crystal have been calculated for arbitrary 2D Bravais lattices in the presence of anisotropic mass, as may be obtainable in Si MOSFETs with (110) surface. By studying the stability of all possible lattices, we find significant change in the crystal structure and melting density of the electron lattice with the lowest ground state energy.
引用
@article{arxiv.cond-mat/9912397,
title = {Two-Dimensional Wigner Crystal in Anisotropic Semiconductor},
author = {Xin Wan and R. N. Bhatt},
journal= {arXiv preprint arXiv:cond-mat/9912397},
year = {2009}
}
备注
4 pages, revtex, 4 figures