面向增强WSe₂光发射的拓扑优化介质腔体
光学
2025-10-01 v1
摘要
光子逆设计，尤其是拓扑优化，使得介质腔体能够实现深亚衍射模式体积和高品质因子，从而为增强光-物质耦合提供了强大的平台。本文设计并制造了在砖晶上具有CMOS兼容性的硅腔体阵列，横向模式尺寸仅为30-40 nm ()。这些腔体被设计用于确定性地耦合到单层（或少层）激子材料，在2D材料下方产生强近场局部化。光力发射(PL)测量显示，相对于裸硅实现可重复的十倍增益，consistent with numerical simulations that account for material absorption and fabrication tolerances。此外，时域PL测量揭示了显著的寿命缩短和非指数动力学，表明为腔体介导的激子-激子相互作用。优化的腔体几何结构增强了远场收集效率，并支持与van der Waals半导体的可扩展集成。我们的结果表明，拓扑优化介质腔体阵列是控制激子发射和相互作用的通用、可扩展平台，为非线性光学、光子电子学和量子光子学创造了新的机遇。
引用
@article{arxiv.2509.26503,
title = {Topology-Optimized Dielectric Cavities for Enhanced Excitonic Light Emission from $\rm WSe_{2}$},
author = {Owen Matthiessen and Brandon Triplett and Omer Yesilyurt and Davide Cassara and Karthik Pagadala and Morris M. Yang and Andres E. Llacsahuanga Allcca and Hamza Ather and Colton Fruhling and Abhishek Bharatbhai Solanki and Yong P. Chen and Hadiseh Alaeian and Alexander V. Kildishev and Vladimir M. Shalaev and Federico Capasso and Alexandra Boltasseva and Vahagn Mkhitaryan},
journal= {arXiv preprint arXiv:2509.26503},
year = {2025}
}
备注
28 pages total (14 main + 14 supplementary), 4 figures + 1 table in main text, 10 figures in Supplementary Information