English

Spin-polarized transport in GaMnAs multilayers

Materials Science 2009-11-07 v2
Authors: L. Loureiro da Silva , M. A. Boselli , X. F. Wang , I. C. da Cunha Lima , A. Ghazali
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Abstract

The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp-d exchange interaction with the Mn magnetic moments.

Keywords

spintronics spin physics in semiconductors charge carrier mobility

Cite

@article{arxiv.cond-mat/0105145,
  title  = {Spin-polarized transport in GaMnAs multilayers},
  author = {L. Loureiro da Silva and M. A. Boselli and X. F. Wang and I. C. da Cunha Lima and A. Ghazali},
  journal= {arXiv preprint arXiv:cond-mat/0105145},
  year   = {2009}
}

Comments

3 pages, 3 figures

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