Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates
Mesoscale and Nanoscale Physics
2009-11-07 v2
Abstract
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.
Cite
@article{arxiv.cond-mat/0205651,
title = {Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates},
author = {C. Ciuti and J. P. McGuire and L. J. Sham},
journal= {arXiv preprint arXiv:cond-mat/0205651},
year = {2009}
}
Comments
3 pages, 2 figures, Replaced with revised version