扭转双层石墨烯中单个范德瓦耳斯结的塞贝克系数
介观与纳米尺度物理
2018-01-08 v1
摘要
当两个平面原子膜被置于范德瓦耳斯距离内时，跨界面的电荷与热输运由动量守恒和结构公度性规则耦合，从而产生出色的热电性质。本文中我们表明，一种有效的“层间声子拖曳”决定了扭转双层石墨烯（tBLG）中形成的范德瓦耳斯间隙上的塞贝克系数（S）。该垂直热电压在温度和密度上均非单调，由电子与面外层呼吸（ZO'/ZA2）声子模的散射产生，并与传统隧穿结中预期的 Landauer-Buttiker 形式截然不同。范德瓦耳斯结中垂直塞贝克效应的可调性，可能在创建具有层状固体的新型多功能热电系统方面具有价值。
引用
@article{arxiv.1801.01269,
title = {Seebeck Coefficient of a Single van der Waals Junction in Twisted Bilayer Graphene},
author = {Phanibhusan S. Mahapatra and Kingshuk Sarkar and H. R. Krishnamurthy and Subroto Mukerjee and Arindam Ghosh},
journal= {arXiv preprint arXiv:1801.01269},
year = {2018}
}
备注
This document is the unedited Author's version of a submitted work that was subsequently accepted for publication in Nano Letters, copyright American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/articlesonrequest/AOR-C2EphThhD7U5a4zVMHye