本征量子反常霍尔绝缘体MnBi2Te4中的量子化拓扑态与奇偶性反常
介观与纳米尺度物理
2025-07-08 v1 材料科学
摘要
当减薄至仅几个原子层时，层状磁性拓扑绝缘体MnBi2Te4为探索广泛的拓扑现象提供了一个卓越平台。在本工作中，我们克服了合成高纯度MnBi2Te4晶体的长期挑战，并报告了在高达45特斯拉磁场下的高质量五层（5-SL）样品中观察到多种量子化拓扑态。我们表明，在朗道量子化存在下，5-SL MnBi2Te4的非平凡拓扑由一个基于(2+1)维狄拉克费米子奇偶性反常的广义拓扑指标所支配。该反常表现为一个反常朗道能级，产生栅极可调的螺旋边缘输运。我们的结果确立了高质量MnBi2Te4作为探索涌现拓扑态和推进新型量子器件应用的稳健平台。
引用
@article{arxiv.2507.03342,
title = {Quantized Topological States and Parity Anomaly in Intrinsic Quantum Anomalous Hall Insulator MnBi2Te4},
author = {Zhongxun Guo and Jingjing Gao and Zhiwei Huang and Di Yue and Zhaochen Liu and Mingyan Luo and Shuang Wu and Xinyu Chen and Guangyi Huang and Yujun Deng and Mengzhu Shi and Yin Xia and Zihan Xu and Chuanying Xi and Guangli Kuang and Changlin Zheng and Shiwei Wu and Hua Jiang and X. C. Xie and Wenzhong Bao and Yuping Sun and Xian Hui Chen and Jing Wang and Wei Ruan and Yuanbo Zhang},
journal= {arXiv preprint arXiv:2507.03342},
year = {2025}
}
备注
13 pages,4 figures