基于BiS2的EuFBiS2中的压力诱导超导
超导电性
2015-10-30 v2
摘要
我们测量了高压下基于BiS2的化合物EuFBiS2的电阻率。多晶EuFBiS2在0.7 GPa以上表现出绝缘体-金属转变和压力诱导的超导电性。超导转变温度随外加压力增加而升高，并在1.8 GPa下于约8.6 K处达到最大值。
引用
@article{arxiv.1505.08002,
title = {Pressure-Induced Superconductivity in BiS2-based EuFBiS2},
author = {Kouji Suzuki and Masashi Tanaka and Saleem James Denholme and Masaya Fujioka and Takahide Yamaguchi and Hiroyuki Takeya and Yoshihiko Takano},
journal= {arXiv preprint arXiv:1505.08002},
year = {2015}
}
备注
10 pages, 3 figures