Possible Jahn-Teller effect in Si-inverse layers
介观与纳米尺度物理
2009-11-07 v1
摘要
Jahn-Teller effect in bivalley Si(100) MOSFET under conditions of quantum Hall effect at integer filling factors nu=1,2,3 is studied. This system is described by SU(4) hidden symmetry. At nu=2 static and dynamic lattice deformation creates an easy-plane anisotropy and antiferromagnetic exchange and lifts the valley degeneracy. At nu=1,3 Coulomb interaction is essential to produce weak easy-plane anisotropy. Three phases: ferromagnetic, canted antiferromagnetic and spin-singlet, have been found. Anisotropy energy of charged skyrmion excitation in every phase is found.
引用
@article{arxiv.cond-mat/0211214,
title = {Possible Jahn-Teller effect in Si-inverse layers},
author = {S. Brener and S. V. Iordanski and A. Kashuba},
journal= {arXiv preprint arXiv:cond-mat/0211214},
year = {2009}
}
备注
8 pages, 4 figures