1T$'$与1T型CrS2及Cr2S3相工程MOCVD合成
材料科学
2025-10-10 v2
摘要
层状Cr-硫化物化合物构成了具有丰富晶体相及其磁性质 diverse 的材料体系,其中许多相仅被预测而未被实验验证。本文展示了通过金属有机化学蒸发(Vapor deposition, MOCVD)合成的CrS2未报道的晶体相——失眼八面体(1T)结构。我们实现了对1T或1T相CrS2的可调性合成。通过偏振拉曼光谱、密度泛函扰动理论(DFPT)以及扫描电子衍射(4D-STEM)鉴定了晶体结构。4D-STEM揭示,1T晶体从最初形成的动力学优先1T相生长,随后转化为热力学稳定的1T相。磁光 Kerr成像显示,1T CrS2晶体在低温下表现出软磁性。我们的MOCVD生长方法实现了具有长程磁有序的2D CrS2复杂相,为实现面向逻辑存储和自旋电子学的可缩放2D磁性材料奠定了基础。
引用
@article{arxiv.2509.07899,
title = {Phase engineering of 1T$'$ and 1T CrS2 and Cr2S3 by MOCVD},
author = {Haoyu Bai and Gareth R. M Tainton and Mauro Och and Max Rimmer and Indrajit Maity and Filippo Mione and Khagesh Tanwar and Rongsheng Cai and Joseph Parker and Kho Zhiquan and Ercin C Duran and Evan Tillotson and Sam Sullivan-Allsop and Alexander Eggeman and Siyuan Deng and Dan Bromley and Jack N. Carter-Gartside and Alex Vanstone and Sandrine Heutz and Will R. Branford and Efrén Navarro-Moratalla and Johannes C. Lischner and Sarah Haigh and Cecilia Mattevi},
journal= {arXiv preprint arXiv:2509.07899},
year = {2025}
}