利用CMOS兼容氢化非晶硅波导在通信波长实现26.5 dB增益的片上参量放大
光学
2015-05-27 v1
摘要
我们首次报道了氢化非晶硅波导中的参量放大研究。在通信波长处实现了高达26.5 dB的宽带开关放大。测得的非线性参数为770 W⁻¹ m⁻¹，非线性吸收为28 W⁻¹ m⁻¹，带隙为1.61 eV。
引用
@article{arxiv.1102.1026,
title = {On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides},
author = {Bart Kuyken and Stéphane Clemmen and Shankar Kumar Selvaraja and Wim Bogaerts and Dries Van Thourhout and Philippe Emplit and Serge Massar and Gunther Roelkens and Roel Baets},
journal= {arXiv preprint arXiv:1102.1026},
year = {2015}
}
备注
3 pages, 2 figures, accepted to Optics Letters