Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long-time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.
@article{arxiv.2204.09295,
title = {Nuclear Spin Quantum Memory in Silicon Carbide},
author = {Benedikt Tissot and Michael Trupke and Philipp Koller and Thomas Astner and Guido Burkard},
journal= {arXiv preprint arXiv:2204.09295},
year = {2022}
}