Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.
@article{arxiv.2109.04737,
title = {Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties},
author = {Charles Babin and Rainer Stöhr and Naoya Morioka and Tobias Linkewitz and Timo Steidl and Raphael Wörnle and Di Liu and Erik Hesselmeier and Vadim Vorobyov and Andrej Denisenko and Mario Hentschel and Christian Gobert and Patrick Berwian and Georgy V. Astakhov and Wolfgang Knolle and Sridhar Majety and Pranta Saha and Marina Radulaski and Nguyen Tien Son and Jawad Ul-Hassan and Florian Kaiser and Jörg Wrachtrup},
journal= {arXiv preprint arXiv:2109.04737},
year = {2022}
}