NaV$_{2}$O$_{5}$ 电荷有序相 above 过渡状态的绝缘体性质：基于簇DMFT的研究

V. V. Mazurenko; A. I. Lichtenstein; M. I. Katsnelson; I. Dasgupta; T. Saha-Dasgupta; V. I. Anisimov

doi:10.1103/PhysRevB.66.081104

NaV$_{2}$O$_{5}$ 电荷有序相 above 过渡状态的绝缘体性质：基于簇DMFT的研究

强关联电子 2009-11-07 v1 材料科学

作者: V. V. Mazurenko , A. I. Lichtenstein , M. I. Katsnelson , I. Dasgupta , T. Saha-Dasgupta , V. I. Anisimov

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摘要

The nature of insulating state driven by electronic correlations in the quarter-filled ladder compound $\alpha'$ NaV $_{2}$ O $_{5}$ is investigated within a cluster dynamical mean-field approach. An extended Hubbard model with first-principle tight-binding parameters have been used. It is shown that the insulating state in the charge-disordered phase of this compound is formed due to the transfer of spectral density and dynamical charge fluctuations where for the latter, the role of inter-site Coulomb interaction is found to be of crucial importance.

关键词

绝缘态电子关联簇DMFT 电荷有序 Hubbard模型谱密度

引用

@article{arxiv.cond-mat/0107200,
  title  = {Nature of insulating state in NaV$_{2}$O$_{5}$ above charge-ordering transition: a cluster DMFT study},
  author = {V. V. Mazurenko and A. I. Lichtenstein and M. I. Katsnelson and I. Dasgupta and T. Saha-Dasgupta and V. I. Anisimov},
  journal= {arXiv preprint arXiv:cond-mat/0107200},
  year   = {2009}
}

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4 pages, 4 figures

NaV$_{2}$O$_{5}$ 电荷有序相 above 过渡状态的绝缘体性质：基于簇DMFT的研究

摘要

关键词

引用

备注

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