GaAs(001)异质生长的蒙特卡罗模拟
材料科学
2009-10-31 v1
摘要
通过基于GaAs(001)异质生长的两种物种原子尺度动力生长模型进行蒙特卡罗模拟，并将结果与扫描隧道显微镜图像进行比较，我们表明初始生长岛屿在采用proper beta2(2x4)重构之前发生结构转化。
引用
@article{arxiv.cond-mat/0004368,
title = {Monte Carlo simulation of GaAs(001) homoepitaxy},
author = {M. Itoh and G. R. Bell and B. A. Joyce and D. D. Vvedensky},
journal= {arXiv preprint arXiv:cond-mat/0004368},
year = {2009}
}
备注
6 pages, 7 figures, talk given at 5th International Conference on Computational Physics (Kanazawa, Japan, 1999). Progress of Theoretical Physics, Supplement, to appear. Related articles can be found at http://wwwacty.phys.sci.osaka-u.ac.jp/~makoto/