强磁场下二维半导体掺杂磁性杂质的局域态
介观与纳米尺度物理
2009-11-07 v2
摘要
我们基于弗里德尔-安森理论推导了强磁场下二维电子气中磁性杂质的理论。我们发现，这种散射会导致在劳德亚亚能级之间出现角动量为零的束缚劳德亚态。共振散射具有自旋选择性，导致劳德亚态强自旋极化，以及杂质d轨道能隙和晶体场能隙的磁场依赖显著变化。
引用
@article{arxiv.cond-mat/0106339,
title = {Localized states in 2D semiconductors doped with magnetic impurities in quantizing magnetic field},
author = {P. Dahan and V. Fleurov and K. Kikoin and I. D. Vagner},
journal= {arXiv preprint arXiv:cond-mat/0106339},
year = {2009}
}
备注
12 pages, 4 figures Submitted to Physical Review B This version is edited and updated in accordance with recent experimental data