The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing Silicon insulated gate bipolar transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9ppm) supplying a 0.05H electromagnetic load, aiming to achieve the accuracy without the use of active filters, by using SiC MOSFETs and a scalable module-based converter design.
@article{arxiv.2201.10824,
title = {High precision scalable power converter for accelerator magnets},
author = {Krister Leonart Haugen and Konstantinos Papastergiou and Panagiotis Asimakopoulos and Dimosthenis Peftitsis},
journal= {arXiv preprint arXiv:2201.10824},
year = {2022}
}
Comments
6 pages. Part of the proceedings of the 2021 TWEPP conference