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This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…

On-silicon inductors using a bulk 0.18 {\mu}m CMOS process have been designed. By shunting different metal layers in parallel, inductor values and quality factors were simulated. Selected inductors were then employed in two open-loop buck…

Applied Physics · Physics 2019-10-01 Nan Xu , Wing-Hung Ki

This work presents a physics based compact model for SiC power MOSFETs that accurately describes the I-V characteristics up to large voltages and currents. Charge-based formulations accounting for the different physics of SiC power MOSFETs…

Systems and Control · Electrical Eng. & Systems 2021-05-03 Cristino Salcines , Sourabh Khandelwal , Ingmar Kallfass

Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…

Materials Science · Physics 2025-12-03 Ang Feng , Alexander Karl , Dominic Waldhör , Marina Avramenko , Peter Moens , Tibor Grasser

Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…

Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about…

Materials Science · Physics 2023-07-04 S. -C. Lee , Y. -T. Chen , C. -R. Liu , S. -M. Wang , Y. -T. Tang , F. -S. Chang , Z. -X. Li , K. -Y. Hsiang , M. -H. Lee

Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…

Systems and Control · Electrical Eng. & Systems 2023-11-14 Jialin Zheng , Zhengming Zhao , Han Xu , Weicheng Liu , Yangbin Zeng

As a result of improvements in power semiconductors, moderate frequency switching supplies can now provide the hundreds of amps typically required by accelerators with zero-to-peak noise in the kHz region ~0.06% in current or voltage mode.…

Accelerator Physics · Physics 2015-05-20 Jay Benesch , Sarin Philip , Thomas Jefferson National Accelerator Facility

The purpose of this project was to design and implement a pipeline Analog-to-Digital Converter using 0.35um CMOS technology. Initial requirements of a 25-MHz conversion rate and 8-bits of resolution where the only given ones. Although…

Hardware Architecture · Computer Science 2012-07-25 Moslem Rashidi , Mikael Hogrud , Donatas Siaudinis , Affaq Qamar , Imran Khan

Basic SiC bipolar transistors have been studied in the past for their applications where high power or high temperature operation is required. However since the current gain in SiC bipolar transistors is very low and therefore, a large base…

Materials Science · Physics 2010-08-19 M. Jagadesh Kumar , Amit Sharma

Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…

Applied Physics · Physics 2021-06-21 Mitsuaki Kaneko , Masashi Nakajima , Qimin Jin , Tsunenobu Kimoto

This paper describes a SIMO DC-DC converter capable of generating all the required voltages (buck and boost) utilizing n-type transistors for the output switches. The design incorporates only one shared bootstrap capacitor and a single pad…

Systems and Control · Electrical Eng. & Systems 2024-04-09 Mohammadreza Zeinali

This paper presents the first sub-10$\mu$W, sub-0.1% total harmonic distortion (THD) sinusoidal current generator (CG) integrated circuit (IC) that is capable of 20kHz output for the bio-impedance (Bio-Z) sensing applications. To benefit…

Hardware Architecture · Computer Science 2024-02-07 Kwantae Kim , Changhyeon Kim , Sungpill Choi , Hoi-Jun Yoo

In this paper, we presented a matrix converter with a high-frequency DC link for EV DC fast charging applications. Introducing this topology allows eliminating electrolytic capacitors in DC link of the converter, which potentially increases…

Systems and Control · Electrical Eng. & Systems 2020-01-01 Alex Borisevich

A high step up dc dc converter based on an isolated dc dc converter with voltage multiplier cells for photovoltaic systems is essentially introduced in this paper. The proposed converter can provide a high step up voltage gain. The switch…

Systems and Control · Electrical Eng. & Systems 2019-09-13 Mamdouh L. Alghaythi , Robert M. Oconnell , Naz E. Islam

Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such…

The reliability of power semiconductor switches is important when considering their vital role in power electronic converters for downhole subsea applications. Respect to technology advancements in material sciences, power MOSFETs with wide…

Systems and Control · Electrical Eng. & Systems 2020-01-17 Shiva Geraei , Saeed Hasanpour Aghdam

Direct current (DC) converters play an essential role in electronic circuits. Conventional high-efficiency DC voltage converters, especially step-up type, rely on switch-mode operation, where energy is periodically stored within and…

A family of interleaved current-fed high step-up dc-dc converters are introduced and analyzed here by combining a voltage multiplier (VM) and an active clamp circuit for high-voltage high-power applications. Low input currents and output…

Systems and Control · Electrical Eng. & Systems 2023-05-30 R. Beiranvand , S. H. Sangani

This work presents an industrially scalable, power-efficient and high-performance quantum magnetometer chip based on proprietary 4H-silicon carbide (SiC) technology, leveraging wafer-scale fabrication techniques to optimize V2 silicon…

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